Highly conducting zinc oxide thin films achieved without postgrowth annealing

Applied Physics Letters

Volumn 97, Issue 24, 2010, Pages

  Singh, Budhi ^a   Khan, Zaheer Ahmed ^a   Khan, Imran ^a   Ghosh, Subhasis ^a  

^a JAWAHARLAL NEHRU UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; AL-DOPING; BAND GAP RENORMALIZATION; BAND GAPS; COMBINED EFFECT; HEAVILY DOPED; HIGH GROWTH TEMPERATURES; IONIZED IMPURITY SCATTERING; OPTICAL TRANSMISSION SPECTRUM; POSTGROWTH ANNEALING; RADIO FREQUENCY MAGNETRON SPUTTERING; ZINC OXIDE THIN FILMS;

CONDUCTIVE FILMS; DOPING (ADDITIVES); ENERGY GAP; LIGHT TRANSMISSION; THIN FILMS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 78650371523     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3525575     Document Type: Article

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