Electrical resistivity of nanocrystalline Al-doped zinc oxide films as a function of Al content and the degree of its segregation at the grain boundaries

Journal of Applied Physics

Volumn 108, Issue 10, 2010, Pages

  Nasr, B ^a   Dasgupta, S ^a   Wang, D ^a   Mechau, N ^a   Kruk, R ^a   Hahn, H ^a  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; AL-DOPED ZINC OXIDE FILMS; AL-DOPED ZNO; AL-DOPING; CARRIER DENSITY; CARRIER SCATTERING; CRITICAL CONCENTRATION; DOPED FILMS; ELECTRICAL RESISTIVITY; ELECTRONIC TRANSPORT; FILM POROSITY; GEL PHASE; NANOCRYSTALLINES; OPTICAL MEASUREMENT; RESISTIVITY MINIMUM; SOL-GEL METHODS; SOLUBILITY LIMITS; TEMPERATURE RAMPING;

CARRIER CONCENTRATION; CHEMICAL ANALYSIS; CONDUCTIVE FILMS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GELS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MORPHOLOGY; OPTICAL DATA PROCESSING; OXIDE FILMS; SOL-GEL PROCESS; SOL-GELS; ZINC OXIDE;

ALUMINUM;

EID: 78650297285     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3511346     Document Type: Conference Paper

References (41)

1. H. Chhina, S. Campbell, and O. Kesler, J. Power Sources JPSODZ 0378-7753 161, 893 (2006). 10.1016/j.jpowsour.2006.05.014 (Pubitemid 44738757)
2. N. G. Patel, P. D. Patel, and V. S. Vaishnav, Sens. Actuators B SABCEB 0925-4005 96, 180 (2003). 10.1016/S0925-4005(03)00524-0
3. S. Dasgupta, S. Gottschalk, R. Kruk, and H. Hahn, Nanotechnology NNOTER 0957-4484 19, 435203 (2008). 10.1088/0957-4484/19/43/435203
4. T. Feng, A. K. Ghosh, and C. Fishman, J. Appl. Phys. JAPIAU 0021-8979 50, 4972 (1979). 10.1063/1.325574 (Pubitemid 10468045)
5. M. Sawada, M. Higuchi, S. Kondo, and H. Saka, J. Appl. Phys. JAPIAU 0021-8979 40, 3332 (2001). 10.1143/JJAP.40.3332
6. P. K. H. Ho, J. S. Kim, J. H. Burroughes, H. Becker, S. F. Y. Li, T. M. Brown, F. Cacialli, and R. H. Friend, Nature (London) NATUAS 0028-0836 404, 481 (2000). 10.1038/35006610 (Pubitemid 30186886)
7. T. Minami, Thin Solid Films THSFAP 0040-6090 516, 5822 (2008). 10.1016/j.tsf.2007.10.063
8. J. J. Berry, D. S. Ginley, and P. E. Burrows, Appl. Phys. Lett. APPLAB 0003-6951 92, 193304 (2008). 10.1063/1.2917565 (Pubitemid 351713489)
9. R. B. H. Tahar and N. B. H. Tahar, J. Appl. Phys. JAPIAU 0021-8979 92, 4498 (2002). 10.1063/1.1509083 (Pubitemid 35328321)
10. G. Hu, B. Kumar, H. Gong, E. F. Chor, and P. Wu, Appl. Phys. Lett. APPLAB 0003-6951 88, 101901 (2006). 10.1063/1.2178404
11. K. Ellmer and R. Wendt, Surf. Coat. Technol. SCTEEJ 0257-8972 93, 21 (1997). 10.1016/S0257-8972(97)00031-5
12. R. Romero, D. Leinen, E. A. Dalchiele, J. R. Ramos-Barrado, and F. Martín, Thin Solid Films THSFAP 0040-6090 515, 1942 (2006). 10.1016/j.tsf.2006.07.152 (Pubitemid 44716183)
13. I. Volintiru, M. Creatore, B. J. Kniknie, C. I. M. A. Spee, and M. C. M. van de Sanden, J. Appl. Phys. JAPIAU 0021-8979 102, 043709 (2007). 10.1063/1.2772569 (Pubitemid 47352435)
14. B. D. Ahn, J. H. Kima, H. S. Kang, C. H. Lee, S. H. Oh, K. W. Kim, G. Jang, and S. Y. Lee, Thin Solid Films THSFAP 0040-6090 516, 1382 (2008). 10.1016/j.tsf.2007.03.072 (Pubitemid 351181223)
15. T. Schuler and M. A. Aegerter, Thin Solid Films THSFAP 0040-6090 351, 125 (1999). 10.1016/S0040-6090(99)00211-4 (Pubitemid 32213742)
16. M. J. Alam and D. C. Cameron, J. Vac. Sci. Technol. A JVTAD6 0734-2101 19, 1642 (2001). 10.1116/1.1340659 (Pubitemid 33305954)
17. W. Tang and D. C. Cameron, Thin Solid Films THSFAP 0040-6090 238, 83 (1994). 10.1016/0040-6090(94)90653-X
18. H. Serier, M. Gaudon, and M. Ḿńtrier, Solid State Sci. SSSCFJ 1293-2558 11, 1192 (2009). 10.1016/j.solidstatesciences.2009.03.007
19. J. Han, P. Q. Mantas, and A. M. R. Senos, J. Mater. Res. JMREEE 0884-2914 16, 459 (2001). 10.1557/JMR.2001.0069
20. J. P. Lin and J. M. Wu, Appl. Phys. Lett. APPLAB 0003-6951 92, 134103 (2008). 10.1063/1.2905279 (Pubitemid 351483722)
21. V. Musat, B. Teixeira, E. Fortunato, R. C. C. Monteiro, and P. Vilarinho, Surf. Coat. Technol. SCTEEJ 0257-8972 180-181, 659 (2004). 10.1016/j.surfcoat. 2003.10.112 (Pubitemid 38464117)
22. X. Zi-qiang, D. Hong, L. Yan, and C. Hang, Mater. Sci. Semicond. Process. MSSPFQ 1369-8001 9, 132 (2006). 10.1016/j.mssp.2006.01.082
23. S. Y. Kuo, W. C. Chen, F. I. Laic, C. P. Cheng, H. C. Kuo, S. C. Wang, and W. F. Hsieh, J. Cryst. Growth JCRGAE 0022-0248 287, 78 (2006). 10.1016/j.jcrysgro.2005.10.047 (Pubitemid 43038828)
24. S. Bandyopadhyay, G. K. Paul, R. Roy, S. K. Sen, and S. Sen, Mater. Chem. Phys. MCHPDR 0254-0584 74, 83 (2002). 10.1016/S0254-0584(01)00402-3 (Pubitemid 34036469)
25. G. G. Valle, P. Hammer, S. H. Pulcinelli, and C. V. Santilli, J. Eur. Ceram. Soc. JECSER 0955-2219 24, 1009 (2004). 10.1016/S0955-2219(03)00597-1 (Pubitemid 38143674)
26. Z. Ben Ayadi, L. El Mir, K. Djessas, and S. Alaya, Nanotechnology NNOTER 0957-4484 18, 445702 (2007). 10.1088/0957-4484/18/44/445702 (Pubitemid 350093303)
27. S. B. Majumder, M. Jain, P. S. Dobal, and R. S. Katiyar, Mater. Sci. Eng., B MSBTEK 0921-5107 103, 16 (2003). 10.1016/S0921-5107(03)00128-4
28. J. G. Lu, Z. Z. Ye, Y. J. Zeng, L. P. Zhu, L. Wang, J. Yuan, and B. H. Zhao, J. Appl. Phys. JAPIAU 0021-8979 100, 073714 (2006). 10.1063/1.2357638 (Pubitemid 44570686)
29. S. Hartner, M. Ali, C. Schulz, M. Winterer, and H. Wiggers, Nanotechnology NNOTER 0957-4484 20, 445701 (2009). 10.1088/0957-4484/20/44/ 445701
30. T. Liu, O. Sakurai, N. Mizutani, and M. Kato, J. Mater. Sci. JMTSAS 0022-2461 21, 3698 (1986). 10.1007/BF02403024
31. Y. Natsume and H. Sakata, Mater. Chem. Phys. MCHPDR 0254-0584 78, 170 (2002). 10.1016/S0254-0584(02)00314-0
32. B. D. Cullity and S. R. Stock, Elements of X-Ray Diffraction, 3rd ed. (Prentice Hall, New Jersey, 2001), p. 169.
33. Z. B. Bahi, M. H. Aslan, M. Ozer, and A. Y. Oral, Cryst. Res. Technol. CRTEDF 0232-1300 44, 961 (2009). 10.1002/crat.200900167
34. D. K. Schrooder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New York, 2006), p. 9.
35. P. K. Basu, Theory of Optical Process in Semiconductors (Clarendon, Oxford, 1997), p. 87.
36. R. A. Smith, Semiconductors, 2nd ed. (Cambridge University Press, Cambridge Britain, 1978), p. 461.
37. I. Hamberg, C. G. Granqvist, K. F. Berggren, B. E. Sernelius, and L. Engström, Phys. Rev. B PLRBAQ 0556-2805 30, 3240 (1984). 10.1103/PhysRevB.30.3240
38. A. P. Roth, J. B. Webb, and D. F. Williams, Phys. Rev. B PLRBAQ 0556-2805 25, 7836 (1982). 10.1103/PhysRevB.25.7836
39. D. Y. Lee, J. -E. Choa, N. -I. Chob, M. -H. Lee, S. -J. Lee, and B. -Y. Kim, Thin Solid Films THSFAP 0040-6090 517, 1262 (2008). 10.1016/j.tsf.2008.05. 027
40. C. Kittle, Introduction to Solid State Physics, 8th ed. (Wiley, New York, 2005), p. 396.
41. B. E. Sernelius, K. F. Berggren, Z. C. Jin, I. Hamberg, and C. G. Granqvist, Phys. Rev. B PLRBAQ 0556-2805 37, 10244 (1988). 10.1103/PhysRevB.37. 10244