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Volumn 257, Issue 7, 2011, Pages 2731-2736

Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films

(3) Oh, Joon Ho a Kim, Kyoung Kook b Seong, Tae Yeon a

a Korea University (South Korea)

b Korea Polytechnic University (South Korea)

Author keywords

Al doped ZnO film; Annealing condition; RF magnetron sputtering; Transparent conducting oxide

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CARRIER CONCENTRATION; GRAIN BOUNDARIES; HALL MOBILITY; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; METALLIC FILMS; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; THIN FILMS; TRANSPARENT CONDUCTING OXIDES; X RAY DIFFRACTION; ZINC OXIDE;

AL DOPED ZNO THIN FILMS; AL-DOPED ZNO FILMS; ANNEALING CONDITION; DEPOSITION TEMPERATURES; ELECTRICAL AND OPTICAL PROPERTIES; GRAIN BOUNDARY SCATTERING; IONIZED IMPURITY SCATTERING; RF-MAGNETRON SPUTTERING;

OPTICAL PROPERTIES;

EID: 79251593482 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.10.053 Document Type: Article

Times cited : (27)

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