Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films

Microelectronics Reliability

Volumn 50, Issue 5, 2010, Pages 730-733

  Kuo, Shou Yi ^a   Liu, Kou Chen ^a   Lai, Fang I ^b   Yang, Jui Fu ^a   Chen, Wei Chun ^c   Hsieh, Ming Yang ^a   Lin, Hsin I ^a   Lin, Woei Tyng ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b YUAN ZE UNIVERSITY   (Taiwan)

^c NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AZO FILMS; ELECTRICAL AND OPTICAL PROPERTIES; GROWTH PARAMETERS; HALL EFFECT MEASUREMENT; OPTICAL AND ELECTRICAL PROPERTIES; OPTOELECTRICAL PROPERTIES; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RF-POWER; ROOM TEMPERATURE; SPUTTERING POWER; STRUCTURAL AND OPTICAL PROPERTIES; UV-VISIBLE SPECTROPHOTOMETER;

ALUMINUM; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

OPTICAL FILMS;

EID: 77953139084     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.01.042     Document Type: Article

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