Effect of deposition parameters and annealing temperature on the structure and properties of Al-doped ZnO thin films

Materials Chemistry and Physics

Volumn 124, Issue 1, 2010, Pages 330-335

  Hsu, C Y ^a,c   Kao, L M ^b   Lin, Y C ^a,c  

^a LUNGHWA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b TUNGNAN UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Annealing; AZO; Grey based Taguchi method; Resistivity

Indexed keywords

AL CONTENT; AL-DOPED ZNO; ANNEALING TEMPERATURES; ANNEALING TREATMENTS; AZO; AZO FILMS; CRYSTALLINITIES; DEPOSITION PARAMETERS; ELECTRICAL RESISTIVITY; GREY-BASED TAGUCHI METHOD; OPTICAL TRANSMITTANCE; ORTHOGONAL ARRAY; PERFORMANCE CHARACTERISTICS; RADIO FREQUENCY MAGNETRON SPUTTERING; RESISTIVITY; RF-POWER; SIGNAL TO NOISE; SODA LIME GLASS SUBSTRATE; SPUTTERING PRESSURES; STRUCTURE AND PROPERTIES; SUBSTRATE TEMPERATURE; TRANSPARENT CONDUCTIVE FILMS; VISIBLE RANGE; VISIBLE REGION; X-RAY PEAKS; ZNO;

ALUMINUM; ANNEALING; CONDUCTIVE FILMS; DEPOSITION; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; PRESSURE EFFECTS; REGRESSION ANALYSIS; SUBSTRATES; SURFACE ROUGHNESS; TAGUCHI METHODS; VACUUM; ZINC OXIDE;

OPTICAL FILMS;

EID: 77957224948     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.06.042     Document Type: Article

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