The Meyer-Neldel rule in organic thin-film transistors

Applied Physics Letters

Volumn 76, Issue 23, 2000, Pages 3433-3435

  Meijer, E J ^a,b   Matters, M ^a   Herwig, P T ^a   De Leeuw, D M ^a   Klapwijk, T M ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000061330     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126669     Document Type: Article

References (40)

1. M. Pope and C. E. Swenberg, Electronic Processes in Organic Crystals (Oxford University Press, New York, 1982).
2. A. R. Brown, C. P. Jarrett, D. M. de Leeuw, and M. Matters, Synth. Met. 88, 37 (1997).
3. G. Horowitz, R. Hajlaoui, and P. Delannoy, J. Phys. III 5, 355 (1995).
4. S. F. Nelson, Y.-Y. Lin, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 72, 1854 (1998).
5. J. H. Schön and B. Batlogg, Appl. Phys. Lett. 74, 260 (1998).
6. W. J. Schoonveld, J. Wildeman, D. Fichou, P. A. Bobbert, B. J. van Wees, and T. M. Klapwijk, Nature (London) 404, 977 (2000).
7. L. Torsi, A. Dodabalapur, L. J. Rothberg, A. W. P. Fung, and H. E. Katz, Phys. Rev. B 57, 2271 (1998).
8. J. H. Schön, S. Berg, Ch. Kloc, and B. Batlogg, Science 287, 1022 (2000).
9. M. C. J. M. Vissenberg and M. Matters, Phys. Rev. B 57, 12964 (1998).
10. W. Meyer and H. Neldel, Z. Tech. Phys. (Leipzig) 18, 588 (1937).
11. For examples see Refs. 31 and 32.
12. A. R. Brown, A. Pomp, D. M. de Leeuw, D. B. M. Klaassen, E. E. Havinga, P. T. Herwig, and K. Müllen, J. Appl. Phys. 79, 2136 (1996).
13. P. T. Herwig and K. Müllen, Adv. Mater. 11, 480 (1999).
14. A. R. Schlatmann, E. J. Meijer, and D. M. de Leeuw (unpublished).
15. R. B. Campbell and J. M. Robertson, Acta Crystallogr. 14, 705 (1961).
16. I. P. M. Bouchoms, W. A. Schoonveld, J. Vrijmoeth, and T. M. Klapwijk, Synth. Met. 104, 177 (1999).
17. FE instead, as suggested by Fortunato and co-workers (see Refs. 22 and 23).
18. R. Schumacher, P. Thomas, K. Weber, and W. Fuhs, Solid State Commun. 62, 15 (1987).
19. R. Schumacher, P. Thomas, K. Weber, W. Fuhs, F. Djamdji, P. G. Le Comber, and R. E. I. Schropp, Philos. Mag. B 58, 389 (1988).
20. M. Yamaguchi and H. Pritsche, J. Appl. Phys. 56, 2303 (1984).
21. A. P. Gnädinger and H. E. Talley, Proc. IEEE 58, 916 (1970).
22. G. Fortunato, L. Mariucci, and C. Reita, in Amorphous and Microcrystalline Semiconductor Devices, edited by J. Kanicki (Artech House, Norwood, 1992), Vol. 2, p. 355.
23. G. Fortunato, D. B. Meakin, P. Migliorato, and P. G. Le Comber. Philos. Mag. B 57, 573 (1988).
24. We note that the mobility curves of the PTV show a deviation from simple Arrhenius behavior at low temperatures. This behavior has thus far been modeled with a specific distribution of traps (see Ref. 3) and hopping in an exponential density of states (see Ref. 9).
25. J. Paloheimo and H. Isotalo, Synth. Met. 55, 3185 (1993).
26. J. C. Wang and Y. F. Chen, Appl. Phys. Lett. 73, 948 (1998).
27. H. Overhof, J. Non-Cryst. Solids 97/98, 539 (1987).
28. M. Ortuno and M. Pollak, Philos. Mag. B 47, L93 (1983).
29. P. Irsigler, D. Wagner, and D. J. Dunstan, J. Phys. C 16, 6605 (1983).
30. B. Movaghar, J. Phys. Coll. C4, 73 (1981).
31. A. Yelon and B. Movaghar, Phys. Rev. Lett. 65, 618 (1990).
32. A. Yelon, B. Movaghar, and H. M. Branz, Phys. Rev. B 46, 12244 (1992).
33. A. M. Szpilka and P. Visčor, Philos. Mag. B 45, 485 (1982).
34. A. Miller and E. Abrahams, Phys. Rev. 120, 745 (1960).
35. N. F. Molt and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon, Oxford, 1979).
36. H. M. Branz, A. Yelon, and B. Movaghar, Mater. Res. Soc. Symp. Proc. 336, 159 (1994).
37. T. Holstein, Ann. Phys. 8, 325 (1959).
38. A. J. Heeger, S. Kivelson, J. R. Schrieffer, and W.-P. Su, Rev. Mod. Phys. 60, 781 (1988).
39. D. Emin, Phys. Rev. Lett. 32, 303 (1974).
40. D. Emin, Adv. Phys. 24, 305 (1975).