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Volumn 21, Issue 4, 2011, Pages 998-1004

Compromise of electrical leakage and capacitance density effects: A facile route for high mobility and sharp subthreshold slope in low-voltage operable organic field-effect transistors

(2) Xu, Wentao a Rhee, Shi Woo a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BI-LAYER STRUCTURE; CAPACITANCE DENSITY; CYANOETHYLATED PULLULAN; DEVICE PERFORMANCE; ELECTRICAL LEAKAGE; HIGH MOBILITY; LOW-VOLTAGE; MOLECULAR LAYER; POLYMERIC DIELECTRICS; POLYMERIC LAYERS; SUBTHRESHOLD SLOPE;

CAPACITANCE; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); POLYMERS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 78651381162 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c0jm02401e Document Type: Article

Times cited : (24)

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