Improvement of subthreshold current transport by contact interface modification in p -type organic field-effect transistors

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Kano, Masataka ^a,b   Minari, Takeo ^b,c   Tsukagoshi, Kazuhito ^c,d,e  

^a DAI NIPPON PRINTING CO LTD   (Japan)

^b RIKEN   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE ACCUMULATIONS; CONTACT INTERFACES; CRITICAL FACTORS; INJECTION BARRIERS; INJECTION EFFICIENCIES; METAL OXIDES; ORGANIC FIELD-EFFECT TRANSISTORS; ORGANIC SEMICONDUCTORS; P TYPES; SHORT-CHANNEL EFFECTS; SUB THRESHOLD SLOPES; SUB-THRESHOLD CURRENTS; SUBTHRESHOLD CHARACTERISTICS; WIDE BAND GAPS;

CHARGE INJECTION; SEMICONDUCTING ORGANIC COMPOUNDS; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 64349106799     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3115826     Document Type: Article

References (17)

1. T. Sekitani, M. Takamiya, Y. Noguchi, S. Nakano, Y. Kato, T. Sakurai, and T. Someya, Nature Mater. NMAACR 1476-1122 10.1038/nmat1903 6, 413 (2007).
2. M. McDowell, I. G. Hill, J. E. McDermott, S. L. Bernasek, and J. Schwartz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2173711 88, 073505 (2006).
3. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), Chap..
4. C. W. Chu, C. F. Sung, Y. Z. Lee, and K. Cheng, Org. Electron. 9, 262 (2008). 1566-1199
5. S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2813640 91, 203508 (2007).
6. S. Luan and G. W. Neudeck, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.351809 72, 766 (1992).
7. H. Ebata, T. Izawa, E. Miyazaki, K. Takimiya, M. Ikeda, H. Kuwabara, and T. Yui, J. Am. Chem. Soc. JACSAT 0002-7863 10.1021/ja074841i 129, 15732 (2007).
8. D. Kumaki, T. Umeda, and S. Tokito, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2828711 92, 013301 (2008).
9. T. Miyadera, T. Minari, and K. Tsukagoshi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2754350 91, 013512 (2007).
10. K. Tsukagoshi, K. Shigeto, I. Yagi, and Y. Aoyagi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2348736 89, 113507 (2006).
11. T. Minari, T. Miyadera, K. Tsukagoshi, T. Hamano, Y. Aoyagi, R. Yasuda, K. Nomoto, T. Nemoto, and S. Isoda, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2767987 91, 063506 (2007).
12. M. L. Chabinyc, J. P. Lu, R. A. Street, Y. Wu, P. Liu, and B. S. Ong, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1766411 96, 2063 (2004).
13. J. Z. Wang, Z. H. Zheng, and H. Sirringhaus, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2234724 89, 083513 (2006).
14. J. Collet, O. Tharaud, A. Chapoton, and D. Vuillaume, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126219 76, 1941 (2000).
15. Y. Zhang, J. R. Petta, S. Ambily, Y. Shen, D. C. Ralph, and G. G. Malliaras, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/adma.200305158 15, 1632 (2003).
16. L. Wang, D. Fine, T. Jung, D. Basu, H. von Seggern, and A. Dodabalapur, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1790033 85, 1772 (2004).
17. K. Tsukagoshi, F. Fujimori, T. Minari, T. Miyadera, T. Hamano, and Y. Aoyagi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2785118 91, 113508 (2007).