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Volumn 5, Issue 10, 2012, Pages

Analysis of the dislocation and polarity in an AlN layer grown using Ga-Al flux

Author keywords

[No Author keywords available]

Indexed keywords

AL-POLARITY; ALN LAYERS; ALN-LAYER GROWN; CONVERGENT-BEAM ELECTRON DIFFRACTION; LIQUID-PHASE EPITAXIAL; NITRIDED; OXYGEN POTENTIAL; POLARITY INVERSION; SAPPHIRE SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPE;

EID: 84868130496     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.101001     Document Type: Article
Times cited : (16)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.