Control of AlN buffer/sapphire substrate interface for AlN growth

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2069-2071

  Miyagawa, Reina ^a   Yang, Shibo ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

AlN; MOVPE; Nitrides; Sapphire

Indexed keywords

ALN; ALN BUFFER; ALN LAYERS; ALN-LAYER GROWN; CRYSTALLINE QUALITY; GROWTH CONDITIONS; HIGH QUALITY; HIGH TEMPERATURE; SAPPHIRE SUBSTRATES; SUBSTRATE INTERFACE; SURFACE MIGRATION; X RAY ROCKING CURVE;

GROWTH TEMPERATURE; NITRIDES; SAPPHIRE;

BUFFER LAYERS;

EID: 79960739914     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001186     Document Type: Article

References (6)

1. S. A. Newman, D. S. Kamber, T. J. Baker, Y. Wu, F. Wu, Z. Chen, S. Nakamura, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 94, 121906 (2009).
2. M. Imura, K. Nakano, T. Kitano, N. Fujimoto, G. Narita, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, Appl. Phys. Lett. 89, 221901 (2006).
3. H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, and N. Kamata, Phys. Status Solidi A 206, 1176 (2009).
4. R. G. Banal, M. Funato, and Y. Kawakami, Appl. Phys. Lett. 92, 241905 (2008).
5. T. Nagashima, K. Hironaka, M. Ishizuki1, Y. Kumagai, A. Koukitu, and K. Takada, Phys. Status Solidi C 6, S2 (2009).
6. Y. Kida, T. Shibata, H. Naoi, H. Miyake, K. Hiramatsu, and M. Tanaka, Phys. Status Solidi A 194, 498 (2002).