Influence of interface formation on the structural quality of AlN single crystals grown by sublimation method

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2107-2109

  Sumathi, R R ^a   Barz, R U ^b   Gille, P ^a   Straubinger, T ^b  

^a UNIVERSITY OF MUNICH   (Germany)

^b SICRYSTAL AG   (Germany)

Author keywords

Aluminium nitride; Hexagonal hillocks; Interface; Sublimation growth

Indexed keywords

ALN; ALN LAYERS; ALN SINGLE CRYSTALS; CRYSTALLINE QUALITY; DOUBLE CRYSTAL X-RAY DIFFRACTION; ETCH HILLOCKS; GROWN CRYSTALS; GROWTH CONDITIONS; HEXAGONAL HILLOCKS; INTERFACE FORMATION; LOW ANGLE GRAIN BOUNDARIES; OPTIMISATIONS; ROCKING CURVES; SCANNING ELECTRON MICROSCOPIC; SIC SUBSTRATES; SIMPLE PHYSICAL MODELS; STRUCTURAL QUALITIES; SUBLIMATION GROWTH;

ALUMINUM COMPOUNDS; DIFFRACTIVE OPTICS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NITRIDES; PHASE TRANSITIONS; SILICON CARBIDE; SUBLIMATION; X RAY DIFFRACTION;

SINGLE CRYSTALS;

EID: 79960734720     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000941     Document Type: Article

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