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Volumn 94, Issue 12, 2009, Pages

Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy

(9) Newman, Scott A a Kamber, Derrick S a Baker, Troy J a Wu, Yuan a Wu, Feng a Chen, Zhen a Namakura, Shuji a Speck, James S a Denbaars, Steven P a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CORUNDUM; CRYSTAL GROWTH; EPITAXIAL FILMS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; VAPORS;

ALN; ALN FILMS; ATOMIC FORCES; CRACK-FREE; DISLOCATION DENSITIES; HYDRIDE VAPOR PHASE EPITAXIES; LATERAL EPITAXIAL OVERGROWTHS; MATERIAL QUALITIES; PATTERNED SAPPHIRE SUBSTRATES; PATTERNED SAPPHIRES; SEED LAYERS;

EPITAXIAL GROWTH;

EID: 63549125452 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3089253 Document Type: Article

Times cited : (20)

References (14)

1
- 34547880808
- 0021-4922 10.1143/JJAP.46.1458.
- M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.46.1458 46, 1458 (2007).
- (2007) Jpn. J. Appl. Phys., Part 1 , vol.46 , pp. 1458
- Imura, M.¹ Nakano, K.² Fujimoto, N.³ Okada, N.⁴ Balakrishnan, K.⁵ Iwaya, M.⁶ Kamiyama, S.⁷ Amano, H.⁸ Akasaki, I.⁹ Noro, T.¹⁰ Takagi, T.¹¹ Bandoh, A.¹²

2
- 41449107273
- 0022-0248 10.1016/j.jcrysgro.2007.11.206.
- M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, and A. Bandoh, J. Cryst. Growth 0022-0248 10.1016/j.jcrysgro.2007.11. 206 310, 2308 (2008).
- (2008) J. Cryst. Growth , vol.310 , pp. 2308
- Imura, M.¹ Sugimura, H.² Okada, N.³ Iwaya, M.⁴ Kamiyama, S.⁵ Amano, H.⁶ Akasaki, I.⁷ Bandoh, A.⁸

3
- 34548013533
- 0003-6951 10.1063/1.2770662.
- H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, Appl. Phys. Lett. 0003-6951 10.1063/1.2770662 91, 071901 (2007).
- (2007) Appl. Phys. Lett. , vol.91 , pp. 071901
- Hirayama, H.¹ Yatabe, T.² Noguchi, N.³ Ohashi, T.⁴ Kamata, N.⁵

4
- 56249128579
- Z. Chen, S. Newman, D. Brown, R. Chung, S. Keller, U. K. Mishra, S. P. Denbaars, and S. Nakamura, Appl. Phys. Lett. 93, 191906 (2008).
- (2008) Appl. Phys. Lett. , vol.93 , pp. 191906
- Chen, Z.¹ Newman, S.² Brown, D.³ Chung, R.⁴ Keller, S.⁵ Mishra, U.K.⁶ Denbaars, S.P.⁷ Nakamura, S.⁸

5
- 3042777497
- 0003-6951 10.1063/1.1763634.
- M. Katona, P. Cantu, S. Keller, Y. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 0003-6951 10.1063/1.1763634 84, 5025 (2004).
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5025
- Katona, M.¹ Cantu, P.² Keller, S.³ Wu, Y.⁴ Speck, J.S.⁵ Denbaars, S.P.⁶

6
- 20444467370
- 0021-4922 10.1143/JJAP.44.L405.
- S. Heikman, S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U. K. Mishra, J. S. Speck, and S. P. DenBaars, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.44.L405 44, L405 (2005).
- (2005) Jpn. J. Appl. Phys., Part 2 , vol.44 , pp. 405
- Heikman, S.¹ Keller, S.² Newman, S.³ Wu, Y.⁴ Moe, C.⁵ Moran, B.⁶ Schmidt, M.⁷ Mishra, U.K.⁸ Speck, J.S.⁹ Denbaars, S.P.¹⁰

7
- 33745021179
- 0031-8965 10.1002/pssa.200565389.
- K. Nakano, M. Imura, G. Narita, T. Kitano, Y. Hirose, N. Fujimoto, N. Okada, T. Kawashima, K. Iida, K. Balakrishnan, M. Tsuda, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, Phys. Status Solidi A 0031-8965 10.1002/pssa.200565389 203, 1632 (2006).
- (2006) Phys. Status Solidi A , vol.203 , pp. 1632
- Nakano, K.¹ Imura, M.² Narita, G.³ Kitano, T.⁴ Hirose, Y.⁵ Fujimoto, N.⁶ Okada, N.⁷ Kawashima, T.⁸ Iida, K.⁹ Balakrishnan, K.¹⁰ Tsuda, M.¹¹ Iwaya, M.¹² Kamiyama, S.¹³ Amano, H.¹⁴ Akasaki, I.¹⁵

8
- 33747825033
- 0003-6951 10.1063/1.2245436.
- Z. Chen, R. S. Q. Fareed, M. Gaevski, V. Adivarahan, J. W. Yang, J. Mei, F. A. Ponce, and A. Khan, Appl. Phys. Lett. 0003-6951 10.1063/1.2245436 89, 081905 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 081905
- Chen, Z.¹ Fareed, R.S.Q.² Gaevski, M.³ Adivarahan, V.⁴ Yang, J.W.⁵ Mei, J.⁶ Ponce, F.A.⁷ Khan, A.⁸

9
- 33947597669
- 0003-6951 10.1063/1.2716068.
- D. S. Kamber, S. Newman, Y. Wu, E. Letts, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 0003-6951 10.1063/1.2716068 90, 122116 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 122116
- Kamber, D.S.¹ Newman, S.² Wu, Y.³ Letts, E.⁴ Denbaars, S.P.⁵ Speck, J.S.⁶ Nakamura, S.⁷

10
- 34548412809
- 0021-4922 10.1143/JJAP.46.L752.
- Q. Fareed, V. Adivarahan, M. Gaevski, T. Katona, J. Mei, F. A. Ponce, and A. Khan, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.46.L752 46, L752 (2007).
- (2007) Jpn. J. Appl. Phys., Part 2 , vol.46 , pp. 752
- Fareed, Q.¹ Adivarahan, V.² Gaevski, M.³ Katona, T.⁴ Mei, J.⁵ Ponce, F.A.⁶ Khan, A.⁷

11
- 34547901766
- 0021-4922 10.1143/JJAP.46.L307.
- K. Balakrishnan, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.46.L307 46, L307 (2007).
- (2007) Jpn. J. Appl. Phys., Part 2 , vol.46 , pp. 307
- Balakrishnan, K.¹ Bandoh, A.² Iwaya, M.³ Kamiyama, S.⁴ Amano, H.⁵ Akasaki, I.⁶

12
- 63549100415
- Proceedings of the International Workshoon Nitride Semiconductors (IWN), Montreux, Switzerland, 6-10 October (unpublished).
- D. S. Kamber, S. Newman, F. Wu, A. Tyagi, D. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, Proceedings of the International Workshop on Nitride Semiconductors (IWN), Montreux, Switzerland, 6-10 October 2008 (unpublished).
- (2008)
- Kamber, D.S.¹ Newman, S.² Wu, F.³ Tyagi, A.⁴ Feezell, D.⁵ Denbaars, S.P.⁶ Speck, J.S.⁷ Nakamura, S.⁸

13
- 0037594261
- 0021-8979 10.1063/1.356017.
- C. J. Sun, P. Kung, A. Saxler, H. Ohsato, K. Haritos, and M. Razeghi, J. Appl. Phys. 0021-8979 10.1063/1.356017 75, 3964 (1994).
- (1994) J. Appl. Phys. , vol.75 , pp. 3964
- Sun, C.J.¹ Kung, P.² Saxler, A.³ Ohsato, H.⁴ Haritos, K.⁵ Razeghi, M.⁶

14
- 63549133460
- personal communication (2 February).
- B. Bastek and J. Christen, personal communication (2 February 2009).
- (2009)
- Bastek, B.¹ Christen, J.²

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