Homoepitaxial growth of AlN on nitrided sapphire by LPE method using Ga-Al binary solution

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 7, 2011, Pages 1494-1497

  Adachi, Masayoshi ^a   Maeda, Kazuo ^b   Tanaka, Akikazu ^b   Kobatake, Hidekazu ^a   Fukuyama, Hiroyuki ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SUMITOMO METAL MINING CO LTD   (Japan)

Author keywords

AlN; Ga Al binary solution; liquid phase epitaxy; nitrogen gas bubbling; sapphire nitridation

Indexed keywords

ALN; BINARY SOLUTIONS; LIQUID PHASE; NITROGEN GAS BUBBLING; SAPPHIRE NITRIDATION;

ALUMINUM; BUBBLE FORMATION; ELECTRON MICROSCOPES; EPITAXIAL GROWTH; LIQUIDS; NITROGEN; SCANNING ELECTRON MICROSCOPY; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

SAPPHIRE;

EID: 79960095379     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201001014     Document Type: Article

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