Elimination of rotational domain in ALN layers grown from GAAL FLUX and effects of growth temperature on the layers

Materials Transactions

Volumn 53, Issue 7, 2012, Pages 1295-1300

  Adachi, Masayoshi ^a   Sugiyama, Masashi ^b   Tanaka, Akikazu ^b   Fukuyama, Hiroyuki ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SUMITOMO METAL MINING CO LTD   (Japan)

Author keywords

Aluminum nitride; Galliumalminum flux; Liquid phase epitaxy; Rotational domain

Indexed keywords

ALN; ALN LAYERS; ANNEALING PROCESS; CRYSTAL QUALITIES; ELEVATED TEMPERATURE; NITRIDED; ROTATIONAL DOMAINS; SAPPHIRE SUBSTRATES; SAPPHIRE SURFACE; TEMPERATURE RANGE;

ALUMINUM NITRIDE; CRYSTAL GROWTH; EPITAXIAL GROWTH; GROWTH RATE; LIQUID PHASE EPITAXY; SAPPHIRE; SUPERCONDUCTING FILMS;

GROWTH TEMPERATURE;

EID: 84866924615     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.MBW201112     Document Type: Article

References (23)

1. H. Hirayama: J. Appl. Phys. 97 (2005) 091-101.
2. X. Hu, J. Deng, J. P. Zhang, A. Lunev, Y. Bilenko, Y. Katona, M. S. Shur, R. Gaska, M. Shatalov and A. Khan: Phys. Status Solidi A 203 (2006) 18-15.
3. H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi and N. Kamata: Appl. Phys. Lett. 91 (2007) 071-901.
4. K. Hironaka, T. Nagashima, S. Ikeda, M. Azuma, K. Takada and H. Fukuyama: J. Crystal Growth 312 (2010) 25-27.
5. K. Kamei, Y. Shirai, T. Tanaka, N. Okada, A. Yauchi and H. Amano: Phys. Status Solidi C 4 (2007) 22-11.
6. H. Isobe, F. Kawamura, M. Kawahara, M. Yoshimura, Y. Mori and T. Sasaki: Jpn. J. Appl. Phys. 44 (2005) L4-88.
7. Y. Kangawa, R. Toki, T. Yayama, B. M. Epelbaum and K. Kakimoto: Appl. Phys. Express 4 (2011) 095-501.
8. M. Adachi, K. Maeda, A. Tanaka, H. Kobatake and H. Fukuyama: Phys. Status Solidi A 208 (2011) 14-94.
9. H. Fukuyama, S. Kusunoki, A. Hakomori and K. Hiraga: J. Appl. Phys. 100 (2006) 024-905.
10. H. Fukuyama, K. Nakamura, T. Aikawa, H. Kobatake, A. Hakomori, K. Takada and K. Hiraga: J. Appl. Phys. 107 (2010) 043-502.
11. K. Ueno, J. Ohta, H. Fujioka and H. Fukuyama: Appl. Phys. Express 4 (2011) 015-501.
12. K. T. Jacob, S. Singh and Y. Waseda: J. Mater. Res. 22 (2007) 34-75.
13. K. T. Jacob and G. Rajitha: J. Cryst. Growth 311 (2009) 38-06.
14. K. Kawaguchi and A. Kuramata: Jpn. J. Appl. Phys. 44 (2005) L1400.
15. Y. Hayashi, K. Matsuda, R. G. Banal, M. Funato and Y. Kawakami: 72nd Fall Meeting of The Japan Society of Applied Physics (Yamagata, 2011) 31a-ZE-3.
16. Y. M. Chiang, D. P. Birnie and W. D. Kingery: Phisical Ceramics, (WILEY, 2009).
17. E. R. Dobrovinskaya, L. A. Lytvynov and V. Pishchik: Sapphire, (Springer, 2009).
18. L. P. Van, O. Kurnosikov and J. Cousty: Surf. Sci. 411 (1998) 263.
19. Y. Waseda, E. Matsubara and K. Shinoda: X-ray Diffraction Crystallography, (Springer, 2011).
20. C. Kittel: Introduction to solid state physics, 7th edition, (WILEY, 1995).
21. Y. M. Sheu, M. Trigo, Y. J. Chien, C. Uher, D. A. Arms, E. R. Peterson, D. A. Walko, E. C. Landahl, J. Chen, S. Ghimire and D. A. Reis: Solid State Commun. 151 (2011) 826.
22. M. Lucht, M. Lerche, H.-C. Wille, Y. V. Shvyd'ko, H. D. Rueter, E. Gerdau and P. Becker: J. Appl. Crystallogr. 36 (2003) 1075.
23. N. Ishizawa, T. Miyata, I. Minato, F. Marumo and S. Iwai: Acta Crystallogr. Sec. B 36 (1980) 228.