Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450 °C

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2837-2839

  Tajima, Jumpei ^a   Murakami, Hisashi ^a   Kumagai, Yoshinao ^a   Takada, Kazuya ^b   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TOKUYAMA CORPORATION   (Japan)

Author keywords

A1. Stresses; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

A1. STRESSES; A3. VAPOR-PHASE EPITAXY; ALN; ALN LAYERS; ALN-LAYER GROWN; B1. NITRIDES; B2. SEMICONDUCTING ALUMINUM COMPOUNDS; CRACK FREE; DECOMPOSITION REACTION; HEATING UP; HYDRIDE VAPOR PHASE EPITAXY; SAPPHIRE SUBSTRATES; TEMPLATE LAYERS; X RAY ROCKING CURVE;

ALUMINA; ALUMINUM; ALUMINUM NITRIDE; CORUNDUM; CRACKS; CRYSTAL GROWTH; NITRIDES; PHASE INTERFACES; SAPPHIRE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; SULFUR COMPOUNDS; VAPORS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 65749093097     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.024     Document Type: Article

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