A prognostic approach for non-punch through and field stop IGBTs

Microelectronics Reliability

Volumn 52, Issue 3, 2012, Pages 482-488

  Patil, Nishad ^a   Das, Diganta ^a   Pecht, Michael ^a,b  

^a UNIVERSITY OF MARYLAND   (United States)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS BEHAVIOR; ANOMALY DETECTION; COLLECTOR EMITTERS; COLLECTOR-EMITTER VOLTAGE; FAILURE THRESHOLDS; IN-SITU; LEAST SQUARES REGRESSION; MAHALANOBIS DISTANCES; MEAN TIME TO FAILURE; PARTICLE FILTER; PARTICLE FILTER ALGORITHMS; PROGNOSTIC APPROACH; REMAINING USEFUL LIVES; STRESS TEST; SYSTEM MODELS; TEST TEMPERATURES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); NONLINEAR FILTERING; POWER ELECTRONICS; STATISTICAL TESTS;

CONDITION MONITORING;

EID: 84857355242     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.10.017     Document Type: Article

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