A parameter extraction algorithm for an IGBT behavioral model

IEEE Transactions on Power Electronics

Volumn 19, Issue 6, 2004, Pages 1365-1371

  Kang, Wanying ^a   Ahn, Hyungkeun ^b   El Nokali, Mahmoud A ^a  

^a University of Pittsburgh   (United States)

^b Konkuk University   (South Korea)

Author keywords

Insulated gate bipolar transistor (IGBT); Matlab optimization toolbox to extract the parameters

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INTEGRAL EQUATIONS; MATHEMATICAL MODELS; NETWORKS (CIRCUITS); OPTIMIZATION;

MATLAB OPTIMIZATION TOOLBOX; PARAMETER EXTRACTION ALGORITHM;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 9244251070     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2004.836635     Document Type: Article

References (6)

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6. H. S. Oh and M. A. El-Nokali, "A new IGBT behavioral model," Solid-State Electron., vol. 45, pp. 2069-2075, Nov. 2001.