Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance-voltage measurements

Solid-State Electronics

Volumn 69, Issue , 2012, Pages 11-13

  Huang, Sheng Yao ^a   Chang, Ting Chang ^a,b   Chen, Min Chen ^a   Jian, Fu Yen ^a   Chen, Shih Cheng ^c   Chen, Te Chih ^a   Jheng, Jing Ling ^a   Lou, Mei Jheng ^a   Yeh, Fon Shan ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Current crowding; InGaZnO (IGZO); Stress; Thin film transistors (TFTs)

Indexed keywords

AMORPHOUS FILMS; BIAS VOLTAGE; DRAIN CURRENT; GALLIUM COMPOUNDS; GAS ADSORPTION; OXYGEN; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; STRESSES; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; VOLTAGE MEASUREMENT; ZINC COMPOUNDS;

CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT CROWDING; CURRENT CROWDING EFFECT; GATE TO SOURCE CAPACITANCES; GATE-TO-DRAIN CAPACITANCE; INGAZNO; PARASITIC RESISTANCES; THIN FILM TRANSISTORS (TFTS);

CAPACITANCE;

EID: 84862792204     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.11.005     Document Type: Letter

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