Dependence of photosensitive effect on the defects created by DC stress for LTPS TFTs

IEEE Electron Device Letters

Volumn 29, Issue 12, 2008, Pages 1322-1324

  Tai, Ya Hsiang ^a   Kuo, Yan Fu ^a   Lee, Yun Hsiang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

DC stress; Leakage current; Photosensitivity; Poly Si thin film transistor (TFT)

Indexed keywords

CIVIL AVIATION; DEFECTS; LIGHT SENSITIVE MATERIALS; PHOTOSENSITIVITY; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS;

CARRIER EFFECTS; DC STRESS; DC STRESSES; DEFECT CREATIONS; DEFECT TYPES; DEVICE DEGRADATIONS; OPTICAL ILLUMINATIONS; POLY-SI THIN-FILM TRANSISTOR (TFT); POLYCRYSTALLINE SILICONS; SELF-HEATING; STRESS CONDITIONS; TWO TYPES;

OPTICAL PROPERTIES;

EID: 57049180718     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2006414     Document Type: Article

References (6)

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