Oxygen-adsorption-induced anomalous capacitance degradation in amorphous indium-gallium-zinc-oxide thin-film-transistors under hot-carrier stress

Journal of the Electrochemical Society

Volumn 159, Issue 3, 2012, Pages

  Chung, Wan Fang ^a   Chang, Ting Chang ^b,c   Lin, Chia Sheng ^b   Tu, Kuan Jen ^d   Li, Hung Wei ^a   Tseng, Tseung Yuen ^a   Chen, Ying Chung ^b   Tai, Ya Hsiang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VALUES; CAPACITANCE VOLTAGE; CHANNEL LAYERS; DRAIN TERMINALS; ELECTRON TRAPPING; ENERGY BAND; GATE VOLTAGES; GATE-TO-DRAIN CAPACITANCE; HOT CARRIER STRESS; IN-VACUUM; INTERFACE STATE; OXYGEN ADSORPTION; OXYGEN-RICH ENVIRONMENT; POSITIVE SHIFT;

AMORPHOUS FILMS; CAPACITANCE; DEGRADATION; ELECTRON TRAPS; GALLIUM; GATE DIELECTRICS; HOT CARRIERS; INDIUM; OXYGEN; THIN FILM TRANSISTORS; ZINC;

GAS ADSORPTION;

EID: 84863115320     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.075203jes     Document Type: Article

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