Analysis of degradation mechanism in SONOS-TFT under hot-carrier operation

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1413-1415

  Chen, Te Chih ^a   Chang, Ting Chang ^a,b   Chen, Shih Ching ^a   Hsieh, Tien Yu ^a   Jian, Fu Yen ^a   Lin, Chia Sheng ^a   Li, Hung Wei ^c   Lee, Ming Hsien ^d   Chen, Jim Shone ^d   Shih, Ching Chieh ^d  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

Hot carriers; nonvolatile memory; thin film transistors (TFTs)

Indexed keywords

BAND TO BAND TUNNELING; CRITICAL POINTS; DEGRADATION MECHANISM; ELECTRICAL FIELD; ELECTRICAL STRESS; HOLE INJECTION; HOT HOLES; INTERFACE STATE; IV CHARACTERISTICS; NON-VOLATILE MEMORIES; OFF-STATE STRESS; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR; TCAD SIMULATION; TRAP STATE;

COMPUTER SIMULATION; DEGRADATION; ELECTRON INJECTION; GATE DIELECTRICS; GATES (TRANSISTOR); HOLE TRAPS; HOT CARRIERS; POLYSILICON;

THIN FILM TRANSISTORS;

EID: 78649447721     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2079912     Document Type: Article

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