Photocurrent generation in carbon nitride and carbon nitride/conjugated polymer composites

ACS Applied Materials and Interfaces

Volumn 4, Issue 9, 2012, Pages 4579-4587

  Byers, Joshua C ^a   Billon, Florence ^b,c   Debiemme Chouvy, Catherine ^b,c   Deslouis, Claude ^b,c   Pailleret, Alain ^b,c   Semenikhin, Oleg A ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b UMR 8235)   (France)

^c SORBONNE UNIVERSITÉ   (France)

Author keywords

atomic force microscopy; bulk heterojunction; nitrogen doped carbon; p n junction; photovoltaics; solar cells

Indexed keywords

AFM; BITHIOPHENES; BULK HETEROJUNCTION; CNX FILMS; DEPOSITION POWER; DONOR-ACCEPTORS; EXTERNAL QUANTUM EFFICIENCY; FILM STRUCTURE; HIGH NITROGEN CONTENT; MAGNETRON POWER; N-DOPING; NANO SCALE; NITROGEN CONTENT; NITROGEN-DOPED; P-N JUNCTION; PHOTOCURRENT GENERATIONS; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC PROPERTY; PHOTOVOLTAICS; POLYMER COMPOSITE; SEMICONDUCTOR PROPERTIES; SPACE CHARGE REGIONS; SPUTTERING TECHNIQUES;

ATOMIC FORCE MICROSCOPY; CARBON; CHARGE TRANSFER; DOPING (ADDITIVES); HETEROJUNCTIONS; NITROGEN; ORGANIC POLYMERS; PHOTOVOLTAIC CELLS; SOLAR CELLS; TUNGSTEN;

CARBON NITRIDE;

CYANOGEN; NITRILE; POLYMER;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; ELECTRIC CONDUCTIVITY; SOLAR ENERGY; SURFACE PROPERTY;

ELECTRIC CONDUCTIVITY; MICROSCOPY, ATOMIC FORCE; NITRILES; POLYMERS; SOLAR ENERGY; SURFACE PROPERTIES;

EID: 84867474754     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am3009482     Document Type: Article

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