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Diamond and Related Materials

Volumn 5, Issue 3-5, 1996, Pages 401-404

Nitrogenated amorphous carbon as a semiconductor

(6) Silva, S R P a,e Rafferty, B b Amaratunga, G A J a Schwan, J c Franceschini, D F d Brown, L M b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c Rheinland Pfälzische Technische Universität Kaiserslautern Landau (Germany)

d PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO (Brazil)

e UNIVERSITY OF SURREY (United Kingdom)

Author keywords

a C:H; a C:H:N; Doping; Electronic defects; Nitrogen; Optoelectronic properties

Indexed keywords

EID: 0000531918 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/0925-9635(95)00446-7 Document Type: Article

Times cited : (50)

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