Probing the band structure of hydrogen-free amorphous carbon and the effect of nitrogen incorporation

Carbon

Volumn 49, Issue 15, 2011, Pages 5229-5238

  MiyajiM A , Y ^a,c   Tison, Y ^a,d   Giusca, C E ^a   Stolojan, V ^a   Watanabe, H ^b   Habuchi, H ^b   Henley, S J ^a   Shannon, J M ^a   Silva, S R P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b GIFU NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d UNIVERSITÉ PARIS DIDEROT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ATOM LASERS; BAND STRUCTURE; CARBON FILMS; CARBON NITRIDE; CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; FIELD EFFECT TRANSISTORS; FILMS; MATERIALS PROPERTIES; NITROGEN; PULSED LASER DEPOSITION; THIN FILM TRANSISTORS; THIN FILMS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

BOTTOM GATE THIN FILM TRANSISTORS; CONDUCTION MECHANISM; FIELD-EFFECT MOBILITIES; JOINT DENSITY OF STATE; NITROGEN INCORPORATION; OPTOELECTRONIC APPLICATIONS; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; SCANNING TUNNELLING SPECTROSCOPY;

AMORPHOUS CARBON;

EID: 84857032634     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2011.07.040     Document Type: Article

References (51)

1. Silva SRP et al., editors. Amorphous carbon: state of the art. Singapore: World scientific; 1997.
2. Silva SRP, editor. Properties of amorphous carbon. London: INSPEC Publication IEE; 2003.
3. Robertson J. Diamond-like amorphous carbon. Mater Sci Eng R - Rep 2002; 37 (4-6): 129-281.
4. Bhattacharyya S, Henley SJ, Mendoza E, Gomez-Rojas L, Allam J, Silva SRP. Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures. Nat Mater 2006; 5 (1): 19-22.
5. Moseler M, Gumbsch P, Casiraghi C, Ferrari AC, Robertson J. The ultrasmoothness of diamond-like carbon surfaces. Science 2005; 309 (5740): 1545-8.
6. Aono M, Nitta S, Katsuno T, Itoh T, Nonomura S. Characterization of low dielectric constant amorphous carbon nitride films. Appl Surf Sci 2000; 159: 341-4.
7. Aono M, Nitta S. High resistivity and low dielectric constant amorphous carbon nitride films: application to low-k materials for ULSI. Diam Relat Mater 2002; 11 (3-6): 1219-22. (Pubitemid 34703776)
8. Robertson J. Electronic structure of diamond-like carbon. Diam Relat Mater 1997; 6 (2-4): 212-8. (Pubitemid 127407197)
9. Robertson J. Electronic and atomic structure of diamond-like carbon. Semicond Sci Technol 2003; 18 (3): S12-9.
10. Reinke P, Garnier MG, Oelhafen P. In situ photoelectron spectroscopy analysis of tetrahedral amorphous carbon films. J Electron Spectrosc Relat Phenom 2004; 136 (3): 239-45.
11. Bhattacharyya S, Spaeth C, Richter F. Valence band spectra of nitrogen incorporated amorphous carbon films. J Appl Phys 2001; 89 (4): 2414-21. (Pubitemid 33662025)
12. x: H films using UPS, XPS and spectroscopic ellipsometry. J Non-Cryst Solids 2002; 299: 912-6. (Pubitemid 34405821)
13. Reinke P, Oelhafen P. Electronic properties of diamond/ nondiamond carbon heterostructures. Phys Rev B 1999; 60 (23): 15772-81.
14. Silva SRP, Robertson J, Amaratunga GAJ, Rafferty B, Brown LM, Schwan J, et al. Nitrogen modification of hydrogenated amorphous carbon films. J Appl Phys 1997; 81 (6): 2626-34. (Pubitemid 127584651)
15. Arena C, Kleinsorge B, Robertson J, Milne WI, Welland ME. Electronic and topographic structure of ta-C, ta-C: N and ta- C: B investigated by scanning tunnelling microscopy. Diam Relat Mater 1999; 8 (2-5): 435-9. (Pubitemid 129310284)
16. Arena C, Kleinsorge B, Robertson J, Milne WI, Welland ME. Electronic properties of tetrahedral amorphous carbon investigated by scanning tunneling microscopy. J Appl Phys 1999; 85 (3): 1609-15. (Pubitemid 129309689)
17. Souto S, Pickholz M, dos Santos MC, Alvarez F. Electronic structure of nitrogen-carbon alloys (a-CNx) determined by photoelectron spectroscopy. Phys Rev B 1998; 57 (4): 2536-40. (Pubitemid 128655192)
18. Hammer P, Victoria NM, Alvarez F. Electronic structure of hydrogenated carbon nitride films. J Vac Sci Technol A 1998; 16 (5): 2941-9.
19. Nitta S, Aono M, Katsuno T, Naruse Y. Amorphous carbon nitride deposition by nitrogen radical sputtering C + N + O + H. Diam Relat Mater 2003; 12 (2): 219-26. (Pubitemid 36453792)
20. Fanchini G, Ray SC, Tagliaferro A. Optical properties of disordered carbon-based materials. Surf Coat Technol 2002; 151: 233-41. (Pubitemid 34231634)
21. Alibart F, Drouhin OD, Benlahsen M, Muhl S, Rodil SE, Camps E, et al. Comparison and semiconductor properties of nitrogen doped carbon thin films grown by different techniques. Appl Surf Sci 2008; 254 (17): 5564-8.
22. Rodil SE, Muhl S. Bonding in amorphous carbon nitride. Diam Relat Mater 2004; 13 (4-8): 1521-31. (Pubitemid 38653068)
23. Clough FJ, Milne WI, Kleinsorge B, Robertson J, Amaratunga GAJ, Roy BN. Tetrahedrally bonded amorphous carbon (ta-C) thin film transistors. Electron Lett 1996; 32 (5): 498-9. (Pubitemid 126515271)
24. Maeng SL, Uchikoga S, Clough FJ, Tagliaferro A, Flewitt AJ, Robertson J, et al. A carbon based bottom gate thin film transistor. Diam Relat Mater 2000; 9 (3-6): 805-10.
25. Habuchi H, Koketsu H, Katsuno T. Optical properties of amorphous carbon nitride films with high nitrogen content. Diam Relat Mater 2007; 16 (4-7): 1340-2.
26. Miyajima Y, Shkunov M, Silva SRP. Amorphous carbon and carbon nitride bottom gate thin film transistors. Appl Phys Lett 2009; 95: 102102-1-3.
27. Miyajima Y, Adamopoulos G, Henley SJ, Stolojan V, Tison Y, Garcia-Caurel E, et al. Electronic state modification in laser deposited amorphous carbon films by the inclusion of nitrogen. J Appl Phys 2008; 104 (6): 063701-1-6.
28. Miyajima Y, Adikaari AADT, Henley SJ, Shannon JM, Silva SRP. Electrical properties of pulsed UV laser irradiated amorphous carbon. Appl Phys Lett 2008; 92 (15): 152104-1-3.
29. Miyajima Y, Shannon JM, Henley SJ, Stolejan V, Cox DC, Silva SRP. Electrical conduction mechanism in laser deposited amorphous carbon. Thin Solid Films 2007; 516 (2-4): 257-61.
30. Silva SRP, Stolojan V. Electron energy loss spectroscopy of carbonaceous materials. Thin Solid Films 2005; 488 (1- 2): 283-90. (Pubitemid 41078306)
31. Giusca CE, Tison Y, Silva SRP. Inter-layer interaction in double-walled carbon nanotubes evidenced by scanning tunneling microscopy and spectroscopy. Nano 2008; 3 (2): 65-73. (Pubitemid 351790214)
32. O'Leary SK. An analytical density of states and joint density of states analysis of amorphous semiconductors. J Appl Phys 2004; 96 (7): 3680-6.
33. Fanchini G, Tagliaferro A. A new interpretation of the Urbach energy in amorphous carbon films. Diam Relat Mater 2004; 13 (4-8): 1402-7.
34. Fanchini G, Tagliaferro A. Disorder and Urbach energy in hydrogenated amorphous carbon: a phenomenological model. Appl Phys Lett 2004; 85 (5): 730-2.
35. Miyajima Y, Henley SJ, Adamopoulos G, Stolojan V, Garcia- Caurel E, Drevillon B, et al. Pulsed laser deposited tetrahedral amorphous carbon with high sp (3) fractions and low optical bandgaps. J Appl Phys 2009; 105 (7): 073521-1-7.
36. Godet C, Kleider JP. Disorder and localization in bandtail hopping transport: experiments and concepts. J Mater Sci - Mater Electron 2006; 17 (6): 413-26.
37. Godet C. Physics of bandtail hopping in disordered carbons. Diam Relat Mater 2003; 12 (2): 159-65. (Pubitemid 36453788)
38. Horcas I, Fernandez R, Gomez-Rodriguez JM, Colchero J, Gomez-Herrero J, Baro AM. WSXM: a software for scanning probe microscopy and a tool for nanotechnology. Rev Sci Instrum 2007; 78 (1): 013705-1-8.
39. Amaratunga GAJ, Silva SRP. Nitrogen containing hydrogenated amorphous carbon for thin-film field emission cathodes. Appl Phys Lett 1996; 68 (18): 2529-31. (Pubitemid 126683965)
40. Tauc J, Grigorov R, Vancu A. Optical properties and electronic structure of amorphous germanium. Phys Stat Solidi 1966; 15 (2): 627-37.
41. Silva SRP, Amaratunga GAJ, Constantinou CP. Opticalproperties of amorphous C/diamond thin-films. J Appl Phys 1992; 72 (3): 1149-53.
42. Amaratunga GAJ, Silva SRP, McKenzie DR. Influence of dc bias voltage on the refractive index and stress of carbon-diamond films deposited from CH4/Ar rf plasma. J Appl Phys 1991; 70 (10): 5374-9.
43. Teo KBK, Ferrari AC, Fanchini G, Rodil SE, Yuan J, Tsai JTH, et al. Highest optical gap tetrahedral amorphous carbon. Diam Relat Mater 2002; 11 (3-6): 1086-90. (Pubitemid 34696398)
44. Schwan J, Ulrich S, Theel T, Roth H, Ehrhardt H, Becker P, et al. Stress-induced formation of high-density amorphous carbon thin films. J Appl Phys 1997; 82 (12): 6024-30. (Pubitemid 127572743)
45. Jackson WB, Amer NM, Boccara AC, Fournier D. Photothermal deflection spectroscopy and detection. Appl Opt 1981; 20 (8): 1333-44.
46. Fournier D, Boccara AC, Amer NM, Gerlach R. Sensitive in situ trace-gas detection by photothermal deflection spectroscopy. Appl Phys Lett 1980; 37 (6): 519-21.
47. Rodil S, Morrison NA, Milne WI, Robertson J, Stolojan V, Jayawardane DN. Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source. Diam Relat Mater 2000; 9 (3-6): 524-9.
48. Waidmann S, Knupfer M, Fink J, Kleinsorge B, Robertson J. Electronic structure studies of undoped and nitrogen-doped tetrahedral amorphous carbon using high-resolution electron energy-loss spectroscopy. J Appl Phys 2001; 89 (7): 3783-92. (Pubitemid 33732472)
49. Silva SRP, Rafferty B, Amaratunga GAJ, Schwan J, Franceschini DF, Brown LM. Nitrogenated amorphous carbon as a semiconductor. Diam Relat Mater 1996; 5 (3-5): 401-4. (Pubitemid 126397241)
50. Hayashi Y, Kamada N, Soga T, Jimbo T. Characterization of amorphous carbon nitride by bottom-gated thin-film structure. Diam Relat Mater 2006; 15 (4-8): 1015-8. (Pubitemid 43929356)
51. Ilie A, Hart A, Flewitt AJ, Robertson J, Milne WI. Effect of work function and surface microstructure on field emission of tetrahedral amorphous carbon. J Appl Phys 2000; 88 (10): 6002-10.