On the epitaxy of germanium telluride thin films on silicon substrates

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 10, 2012, Pages 1939-1944

  Giussani, Alessandro ^a   Perumal, Karthick ^a   Hanke, Michael ^a   Rodenbach, Peter ^a   Riechert, Henning ^a   Calarco, Raffaella ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Chalcogenides; Epitaxy; Germanium telluride; GeTe; Phase change materials

Indexed keywords

CHALCOGENIDES; EPITAXIAL FILMS; EPITAXIAL GROWTH; INORGANIC COMPOUNDS; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; PHASE CHANGE MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SILICON COMPOUNDS; STRAIN; SUBSTRATES; TELLURIUM COMPOUNDS; THERMAL EXPANSION;

DEPOSITION CONDITIONS; GERMANIUM TELLURIDE; GETE; ORIENTATION RELATIONSHIP; QUADRUPOLE MASS SPECTROMETRY; STOICHIOMETRIC COMPOSITIONS; SUBSTRATE TEMPERATURE; THERMAL EXPANSION COEFFICIENTS;

GERMANIUM COMPOUNDS;

EID: 84867206554     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201200367     Document Type: Article

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