Insight into the growth and control of single-crystal layers of Ge-Sb-Te phase-change material

Crystal Growth and Design

Volumn 11, Issue 10, 2011, Pages 4606-4610

  Katmis, Ferhat ^a   Calarco, Raffaella ^a   Perumal, Karthick ^a   Rodenbach, Peter ^a   Giussani, Alessandro ^a   Hanke, Michael ^a   Proessdorf, André ^a   Trampert, Achim ^a   Grosse, Frank ^a   Shayduk, Roman ^a,c   Campion, Richard ^b   Braun, Wolfgang ^a,d   Riechert, Henning ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c UNIVERSITY OF POTSDAM   (Germany)

^d CreaTec Fischer Co GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; EPITAXIAL ORIENTATIONS; GE-SB-TE; GROWTH PARAMETERS; IN-SITU; INAS; NOMINAL COMPOSITION; NON-VOLATILE MEMORIES; OPTICAL DISKS; PHASE CHANGES; QUADRUPOLE MASS SPECTROMETRY; ROUGH SURFACES; SINGLE-CRYSTALLINE; SMOOTH SURFACE; SUBSTRATE MATERIAL; SUBSTRATE TEMPERATURE; SYNCHROTRON RADIATION X-RAY DIFFRACTIONS;

CRYSTALLINE MATERIALS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GERMANIUM; INDIUM ARSENIDE; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

INTERFACES (MATERIALS);

EID: 80053511765     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg200857x     Document Type: Article

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