Phase separation and exchange biasing in the ferromagnetic IV-VI semiconductor Ge1-x Mnx Te

Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

  Lechner, R T ^a,b   Springholz, G ^a   Hassan, M ^a   Groiss, H ^a   Kirchschlager, R ^a   Stangl, J ^a   Hrauda, N ^a   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b UNIVERSITY OF LEOBEN   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETICS; EXCHANGE BIASING; MAGNETIC EXCHANGE; MN CONTENT;

ANTIFERROMAGNETISM; CRYSTAL GROWTH; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GERMANIUM; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHASE MODULATION; SEMICONDUCTOR GROWTH;

PHASE SEPARATION;

EID: 77955143132     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3459149     Document Type: Article

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