Analysis of the series resistance and interface states of Au/SI 3N 4/n-Si (metal-insulator-semiconductor) Schottky diodes using I-V characteristics in a wide temperature range 035802

Physica Scripta

Volumn 86, Issue 3, 2012, Pages

  Pur F Z ^a   Tataroglu A ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BIAS DEPENDENCE; ELECTRICAL PARAMETER; ENERGY DISTRIBUTIONS; FORWARD BIAS; I-V MEASUREMENTS; IDEALITY FACTORS; IV CHARACTERISTICS; METAL-INSULATOR-SEMICONDUCTORS; OHM'S LAW; SCHOTTKY DIODES; SERIES RESISTANCES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; ZERO-BIAS;

ELECTRIC RESISTANCE; INTERFACE STATES; MIS DEVICES; SILICON; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 84866982750     PISSN: 00318949     EISSN: 14024896     Source Type: Journal    
DOI: 10.1088/0031-8949/86/03/035802     Document Type: Article

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