Systematic investigation of the annealing temperature and composition effects on the dielectric properties of sol-gel BaxSr1-xTiO3 thin films

Journal of the European Ceramic Society

Volumn 33, Issue 1, 2013, Pages 139-146

  Levasseur, D ^a,b   El Shaarawi, H B ^c   Pacchini, S ^c   Rousseau, A ^a   Payan, S ^a   Guegan, G ^b   Maglione, M ^a  

^a UNIVERSITÉ DE BORDEAUX   (France)

^b STMICROELECTRONICS   (France)

^c UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

Capacitors; Dielectric properties; Films; Grain size

Indexed keywords

ANNEALING; CAPACITORS; COMPOSITION EFFECTS; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; FILMS; GRAIN GROWTH; MIM DEVICES; PERMITTIVITY; SOL-GEL PROCESS; SOL-GELS;

ANNEALING TEMPERATURES; GRAIN SIZE; HIGH FREQUENCY HF; LOW FREQUENCY MEASUREMENTS; PARAELECTRIC TRANSITIONS; POST DEPOSITION ANNEALING; SOL-GEL THIN FILMS; SYSTEMATIC EFFECTS;

THIN FILMS;

EID: 84866978165     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2012.07.041     Document Type: Article

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