Influence of annealing temperature on the band structure of sol-gel Ba 0.65Sr0.35TiO3 thin films on n -type Si(100)

Applied Physics Letters

Volumn 88, Issue 13, 2006, Pages

  Lu, H ^a   Pan, J S ^b   Chen, X F ^a   Zhu, W G ^a   Tan, O K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; ELLIPSOMETRY; FERMI LEVEL; POLYCRYSTALLINE MATERIALS; SOL-GELS; STRONTIUM COMPOUNDS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURE; BAND ENERGY SHIFTS; FIELD EMISSION;

BAND STRUCTURE;

EID: 33645499838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2189828     Document Type: Article

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