The effect of growth temperature on the nanostructure and dielectric response of BaTiO3 ferroelectric films

Thin Solid Films

Volumn 515, Issue 16 SPEC. ISS., 2007, Pages 6302-6308

  Berge, John ^a   Vorobiev, Andrei ^a   Gevorgian, Spartak ^a,b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Ericsson Microwave Systems AB   (Sweden)

Author keywords

Dielectric response; Ferroelectrics; Microstructure

Indexed keywords

ATOMIC FORCE MICROSCOPY; BARIUM COMPOUNDS; CURIE TEMPERATURE; FILM GROWTH; GRAIN SIZE AND SHAPE; GROWTH TEMPERATURE; NANOSTRUCTURES; PERMITTIVITY; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SIZE DISTRIBUTION;

DIELECTRIC RESPONSES; FILM/ELECTRODE INTERFACES; LOW-FIELD DIELECTRIC MEASUREMENTS;

FERROELECTRIC THIN FILMS;

EID: 34247533699     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.139     Document Type: Article

References (12)

1. Vorobiev A., Rundqvist P., Khamchane K., and Gevorgian S. Appl. Phys. Lett. 83 (2003) 1344
2. Kuylenstierna D., Vorobiev A., Linnér P., and Gevorgian S. IEEE Trans. Microwave Theor. Tech. 53 (2005) 2164
3. Kuylenstierna D., Vorobiev A., Linnér P., and Gevorgian S. Microw. Wirel. Compon. Lett. 16 (2006) 167
4. Tagantsev A.K., Sherman V.O., Astafiev K.F., Venkatesh J., and Setter N. J. Electroceram. 11 (2003) 5
5. 3 voltage tunable capacitors on fused silica substrates for applications in microwave microelectronics", accepted for E-MRS 2006 Spring meeting, Symposium J, and Thin Solid Films special issue. [Elsevier staff: this manuscript ID is TSF-D-06-00695, should be part of the same batch of manuscript. MFP for Thin Solid Films].
6. Ahn C.H., Rabe K.M., and Triscone J.-M. Science 303 (2004) 488
7. In: Maissel L.I., and Glang R. (Eds). Handbook of Thin Film Technology (1970), McGraw-Hill 8
8. Baumert B.A., Chang L.-H., Matsuda A.T., Tsai T.-L., Tracy C.J., Gregory R.B., Fejes P.L., Cave N.G., Chen W., Taylor D.J., Otsuki T., Fujii E., Hayashi S., and Suu K. J. Appl. Phys. 82 (1997) 2558
9. Fu C., Yang C., Chen H., Hu L., and Wang Y. Mater. Lett. 59 (2005) 330
10. Lee W.-J., Kim H.-G., and Yoon S.-G. J. Appl. Phys. 80 (1996) 5891
11. Sinnamon L.J., Saad M.M., Bowman R.M., and Gregg J.M. Appl. Phys. Lett. 81 (2002) 703
12. Gevorgian S., Vorobiev A., and Lewin T. J. Appl. Phys. 99 (2006) 124112