Effects of interface on the dielectric properties of Ba 0.6 Sr 0.4 TiO 3 thin film capacitors

Applied Surface Science

Volumn 254, Issue 10, 2008, Pages 3175-3179

  Chen, Hongwei ^a   Yang, Chuanren ^a   Fu, Chunlin ^b   Zhang, Jihua ^a   Liao, Jiaxuan ^a   Hu, Liye ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b CHONGQING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Barium strontium titanate; Dielectric properties; Interface; Thin film

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; DIELECTRIC PROPERTIES; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC CONCENTRATION; BARIUM STRONTIUM TITANATE; COERCIVE FIELD; RF SPUTTERING POWER;

THIN FILM DEVICES;

EID: 39549092814     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.10.096     Document Type: Article

References (26)

1. Kim H.S., Hyun T.S., Kim H.G., Kim I.D., Yun T.S., and Lee J.C. Appl. Phys. Lett. 89 (2006) 052902
2. Fu C., Pan F., Chen H., Feng S., Cai W., and Yang C. Int. J. Infrared Milli Waves 28 3 (2007) 229-235
3. Yamada T., Sherman V.O., Nöth A., Muralt P., Tagantsev A.K., and Setter N. Appl. Phys. Lett. 89 (2006) 032905
4. Chen C.L., Shen J., Chen S.Y., Luo G.P., Chu C.W., Miranda F.A., Van Keuls E.W., Jiang J.C., Meletis E.I., and Chang H.Y. Appl. Phys. Lett. 78 5 (2001) 652-654
5. Zhu W., Tan O.K., Ding J., and Oh J.T. J. Mater. Res. 15 6 (2000) 1291-1302
6. Tan O.K., Chen X.F., and Zhu W.G. Ferroelectrics 225 (1999) 295-302
7. Panda B., Roy A., Dhar A., and Ray S.K. J. Appl. Phys. 101 (2007) 064116
8. Chen H., Yang C., Fu C., Zhao L., and Gao Z. Appl. Surf. Sci. 252 12 (2006) 4171-4177
9. Chen B., Yang H., Miao J., Zhao L., Cao L.X., Xu B., Qiu X.G., and Zhao B.R. J. Appl. Phys. 97 (2005) 024106
10. Jain M., Majumder S.B., Katiyar R.S., and Desu S.B. Appl. Phys. A 77 (2003) 789-792
11. Fardin E.A., Holland A.S., Ghorbani K., Akdogan E.K., Simon W.K., Safari A., and Wang J.Y. Appl. Phys. Lett. 89 (2006) 182907
12. Cao H.X., Lo V.C., and Li Z.Y. J. Appl. Phys. 101 (2007) 014113
13. Chen H., Yang C., Fu C., Pei Y., and Hu L. Mater. Sci. Eng. B 121 1/2 (2005) 98-102
14. Ho C.C., Chiou B.S., and Chang L.C. Appl. Phys. Lett. 90 (2007) 132906
15. Liao J.X., Yang C.R., Zhang J.H., Fu C.L., Chen H.W., and Leng W.J. Appl. Surf. Sci. 252 20 (2006) 7407-7414
16. Qin Y.L., Jia C.L., Urban K., Liedtke R., and Waser R. Appl. Phys. Lett. 80 15 (2002) 2728-2730
17. Shin J.C., Park J., Hwang C.S., and Kim H.J. J. Appl. Phys. 86 1 (1999) 506-513
18. Gao H.J., Chen C.L., Rafferty B., Pennycook S.J., Luo G.P., and Chu C.W. Appl. Phys. Lett. 75 17 (1999) 2542-2544
19. Lee J.M., Kang S.Y., Shin J.C., and Kim W.J. Appl. Phys. Lett. 74 23 (1999) 3489-3491
20. Zhu W., Cheng J., Yu S., Gong J., and Meng Z. Appl. Phys. Lett. 90 (2007) 032907
21. Cukauskas E.J., Kirchoefer S.W., and Pond J.M. Jpn. J. Appl. Phys. 88 5 (2000) 2830-2835
22. Lu S.G., Zhu X.L., Mak C.L., Wong K.H., Chan H.L.W., and Choy C.L. Appl. Phys. Lett. 82 17 (2003) 2877-2879
23. Zhou C., and Newns D.M. J. Appl. Phys. 82 6 (1997) 3081
24. Sinnamon L.J., Bowman R.M., and Gregg J.M. Mat. Res. Soc. Symp. Proc. 655 (2000) 321-326
25. Lee B.T., and Hwang C.S. Appl. Phys. Lett. 77 1 (2000) 124-126
26. Briggs D., and Seah M.P. Practical Surface Analysis (1983), John Wiley & Son, New York pp. 511-514