Structural factors impacting carrier transport and electroluminescence from Si nanoclustersensitized Er ions

Optics Express

Volumn 20, Issue 20, 2012, Pages 22490-22502

  Cueff, Sébastien ^a,d   Labbé, Christophe ^a   Jambois, Olivier ^b   Berencén, Yonder ^b   Kenyon, Anthony J ^c   Garrido, Blas ^b   Rizk, Richard ^a  

^a UNIVERSITÉ DE CAEN   (France)

^b UNIVERSITY OF BARCELONA   (Spain)

^c Department of Electronic and Electrical Engineering ^*  (United Kingdom)

^d Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; ELECTROLUMINESCENCE; ERBIUM; FACTOR ANALYSIS; OPTIMIZATION; SILICA;

ACTIVE LAYER; DEGREE OF SEGREGATION; ELECTRICAL EXCITATION; ERBIUM DOPED; EXCESS SI; EXCITATION MECHANISMS; HIGH CONDUCTIVITY; HIGH DENSITY; IS IMPACTS; NANO INCLUSION; OXIDE MATRIX; POOLE-FRENKEL MECHANISMS; SAMPLE THICKNESS; SI ATOMS; SI NANOCLUSTER; STRESS-INDUCED; STRUCTURAL FACTOR; TRAPPING STATE;

SILICON;

ERBIUM; HEAVY ION; ION; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; LUMINESCENCE; METHODOLOGY; PARTICLE SIZE; RADIATION EXPOSURE; SURFACE PROPERTY; ULTRASTRUCTURE;

ELECTRON TRANSPORT; ERBIUM; HEAVY IONS; IONS; LUMINESCENT MEASUREMENTS; NANOSTRUCTURES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 84866698363     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.022490     Document Type: Article

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