Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

Applied Physics Letters

Volumn 97, Issue 20, 2010, Pages

  Savchyn, Oleksandr ^a   Coffey, Kevin R ^a   Kik, Pieter G ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ER-DOPED; ER3+ IONS; OPTICAL AMPLIFICATIONS; SI CONCENTRATION; SI NANOCRYSTAL;

CONCENTRATION (PROCESS); ERBIUM; NANOCRYSTALS; SILICON COMPOUNDS;

SILICON;

EID: 78649290949     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3518476     Document Type: Article

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