Erbium emission in MOS light emitting devices: From energy transfer to direct impact excitation

Nanotechnology

Volumn 23, Issue 12, 2012, Pages

  Ramirez J M ^a   Ferrarese Lupi, F ^a   Jambois, O ^a   Berencen Y ^a   Navarro Urrios, D ^a,b   Anopchenko, A ^c   Marconi, A ^c   Prtljaga, N ^c   Tengattini, A ^c   Pavesi, L ^c   Colonna, J P ^d   Fedeli, J M ^d   Garrido, B ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

^c UNIVERSITY OF TRENTO   (Italy)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT IMPACT; ERBIUM DOPED; ERBIUM EMISSION; EXCITATION MECHANISMS; FOWLER-NORDHEIM INJECTION; HIGH-FIELD; HOLE INJECTION; INJECTED CARRIERS; LIGHT EMITTING DEVICES; POLARIZATION CONDITIONS; PULSED VOLTAGES; SILICON NANOCLUSTERS; SILICON RICH SILICON OXIDES; TIME RESOLVED MEASUREMENT;

ELECTROLUMINESCENCE; ENERGY TRANSFER; EXCITED STATES; MOS DEVICES; SILICON; SILICON COMPOUNDS;

ERBIUM;

EID: 84858378538     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/12/125203     Document Type: Article

References (31)

1. Jambois O, Gourbilleau F, Kenyon A J, Montserrat J, Rizk R and Garrido B 2010 Opt. Express 18 2230
2. Yerci S, Li R, Kucheyev S O, Van Buuren T, Basu S N and Dal Negro L 2009 Appl. Phys. Lett. 95 031107
3. Gallis S, Huang M, Efstathiadis H, Eisenbraun E, Kaloyeros A E, Nyein E E and Hommerich U 2005 Appl. Phys. Lett. 87 091901
4. Wodjak M, Klik M, Forcales M, Gusev O B, Gregorkiewicz T, Pacifici D, Franz G, Priolo F and Iacona F 2004 Phys. Rev. B 69 233315
5. Izeddin I, Moskalenko A S, Yassievich I N, Fujii M and Gregorkiewicz T 2006 Phys. Rev. Lett. 97 207401
6. Miller G M, Briggs R M and Atwater H 2010 J. Appl. Phys. 108 063109
7. Kik P G, Brongersma M L and Polman A 2000 Appl. Phys. Lett. 76 2325
8. Navarro-Urrios D, Jambois O, Ferrarese Lupi F, Pellegrino P, Garrido B, Pitanti A, Prtljaga N, Daldosso N and Pavesi L 2011 Opt. Mater. 33 1086
9. Ran G Z, Chen Y, Qin W C, Fu J S, Ma Z C, Zong W H, Lu H, Qin J and Qin G G 2001 J. Appl. Phys. 90 5835
10. Sun K, Xu W J, Zhang B, You L P, Ran G Z and Qin G G 2008 Nanotechnology 19 105708
11. Sun J M, Skorupa W, Dekorsky T, Helm M and Nazarov A N 2005 Opt. Mater. 27 1050
12. Perlvarez M, Barreto J, Carreras J, Morales A, Navarro-Urrios D, Lebour Y, Domnguez C and Garrido B 2009 Nanotechnology 20 405201
13. Carreras J, Arbiol J, Garrido B, Bonafos C and Montserrat J 2008 J. Appl. Phys. Lett. 92 091103
14. Prtljaga N et al 2011 Opt. Mater. 33 1083
15. DiMaria D J, Dong D W, Falcony C, Theis T N, Kirtley J R, Tsang J C, Young D R and Pesavento F L 1983 J. Appl. Phys. 54 10
16. Jambois O, Berenćn Y, Hijazi K, Wodjak M, Kenyon A J, Gourbilleau F, Rizk R and Garrido B 2009 J. Appl. Phys. 106 63526
17. Konig D, Rennau M and Henker M 2007 Solid-State Electron. 51 650
18. Hadjadj A, Simonetti O, Maurel T, Salace G and Petit C 2002 Appl. Phys. Lett. 80 18
19. Lenzlinger M and Snow E H 1969 J. Appl. Phys. 40 1
20. DiMaria D J, Kirtley J R, Pakulis E J, Dong D W, Kuan T S, Pesavento F L, Theis T N and Cutro J A 1984 J. Appl. Phys. 56 2
21. Coffa S, Franz G and Priolo F 1996 Appl. Phys. Lett. 69 2077
22. Wang S, Eckau A, Neufeld E, Carius R and Buchal Ch 1997 Appl. Phys. Lett. 71 2824
23. Lombardo S, Campisano S U, Van den Hoven G N and Polman A 1995 J. Appl. Phys. 77 6504
24. Iacona F, Pacifici D, Irrera A, Miritello M, Franz G and Priolo F 2002 Appl. Phys. Lett. 81 3242
25. Walters R J, Bourianoff G I and Atwater H A 2005 Nature Mater. 4 143
26. Navarro-Urrios D, Pitanti A, Daldosso N, Gourbilleau F, Rizk R, Garrido B and Pavesi L 2009 Phys. Rev. B 79 193312
27. Kanjilal A, Rebohle L, Skorupa W and Helm M 2009 Appl. Phys. Lett. 94 101916
28. Izeddin I, Timmerman D, Gregorkiewicz T, Moskalenko A S, Prokofiev A A and Yassievich I N 2008 Phys. Rev. B 78 0.35327
29. Savchyn O, Ruhge F R, Kik P G, Todi R M, Coffey K R, Nukala H and Heinrich H 2007 Phys. Rev. B 76 195419
30. Prokofiev A A, Moskalenko A S and Yassievich I N 2008 Mater. Sci. Eng. B 146 121
31. Fujii M, Yoshida M, Kanzawa Y, Hayashi S and Yamamoto K 1997 Appl. Phys. Lett. 71 1198