Si nanocluster sensitization of Er-doped silica for optical amplet using top-pumping visible LEDs

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 4, 2006, Pages 783-795

  Shin, Jung H ^b   Lee, Jinku ^b,c   Han, Hak Seung ^d   Jhe, Ji Hong ^e   Chang, Jee Soo ^b   Seo, Se Young ^f   Lee, Hansuek ^g   Park, Namkyoo ^a,g  

^a Korea Advanced Institute of Science and Technology ^*

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

^d SAMSUNG Electronics   (South Korea)

^e LG Philips   (South Korea)

^f MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^g Seoul National University   (South Korea)

Author keywords

Erbium; Microphotonics; Optical amplifier; Silicon nanocrystal

Indexed keywords

COMPOSITION; ERBIUM; LIGHT EMITTING DIODES; OPTIMIZATION; SEMICONDUCTOR DOPING; SILICA;

MICROPHOTONICS; NANOCLUSTER SENSITIZATION; NANOSCALE ENGINEERING; SILICON NANOCRYSTAL;

LIGHT AMPLIFIERS;

EID: 33747298593     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.876160     Document Type: Article

References (56)

1. National Research Council, Condensed Matter and Materials Physics. Washington, DC: National Academy Press, 1999.
2. F. E. Auzel, "Materials and devices using double-pumped phosphors with energy transfer," Proc. IEEE, vol. 61, no. 6, pp. 758-786, Jun. 1973.
3. 25 glass," Appl. Phys. Lett., vol. 73, p. 3196, 1998.
4. H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, "1.54 μm luminescence of erbium-implanted III-V semiconductors and silicon," Appl. Phys. Lett., vol. 43, p. 943, 1983.
5. 3+ luminescence in silicon," J. Appl. Phys., vol. 70, p. 2627, 1991.
6. B. Zheng, J. Michel, F. Y. G. Ren, L. C. Kimerling, D. C. Jacobson, and J. M. Poate, "Room-temperature sharp line electroluminescence at λ = 1.54 μm from an erbium-doped, silicon light-emitting diode," Appl. Phys. Lett., vol. 64, p. 2842, 1994.
7. G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, "Roomtemperature electroluminescence from Er-doped crystalline Si," Appl. Phys. Lett., vol. 64, p. 2235, 1994.
8. A. Polman, G. N. van den Hoven, J. S. Custer, J. H. Shin, R. Serna, and P. F. A. Alkemade, "Erbium in crystal silicon: Optical activation, excitation, and concentration limits," J. Appl. Phys., vol. 77, p. 1256, 1995.
9. 3+ in crystalline silicon," J. Appl. Phys., vol. 78, p. 3874, 1995.
10. P. N. Favennec, H. L'Haridon, M. Salvi, D. Moutonnet, and Y. L. Guillou, "Luminescence of erbium implanted in various semiconductors: IV, III-V, and II-VI materials," Electron. Lett., vol. 25, no. 11, pp. 718-719, May 1989.
11. A. G. Cullis and L. T. Canham, "Visible light emission due to quantum size effects in highly porous crystalline silicon," Nature, vol. 353, p. 335, 1991.
12. A. J. Kenyon, P. F. Trwoga, M. Federighi, and C. W. Pitt, "Optical properties of PECVD erbium-doped silicon-rich silica: Evidence for energy transfer between silicon microclusters and erbium ions," J. Phys. Condens. Matter, vol. 6, p. L319, 1994.
13. T. Kimura, A. Yokoi, H. Horiguchi, R. Saito, T. Ikoma, and A. Sato, "Electrochemical Er doping of porous silicon and its room-temperature luminescence at 1.54 μm," Appl. Phys. Lett., vol. 65, p. 983, 1994.
14. 3+," Appl. Phys. Lett., vol. 71, p. 4525, 1997.
15. J. H. Shin, M.-J. Kim, S.-Y. Seo, and C. Lee, "Composition dependence of room temperature 1.54 mm Er31 luminescence from erbium-doped silicon:oxygen thin films deposited by electroncyclotron resonance plasma enhanced chemical vapor deposition," Appl. Phys. Lett., vol. 72, p. 1092, 1998.
16. M. Stepikhova, W. Jantsch, G. Kocher, L. Palmetshofer, M. Schoisswohl, and H. J. von Bardeleben, "Direct excitation spectroscopy of Er centers in porous silicon," Appl. Phys. Lett., vol. 71, p. 2975, 1997.
17. G. Franzò, V. Vinciguerra, and F. Priolo, "The excitation mechanism of rare-earth ions in silicon nanocrystals," Appl. Phys. A, vol. 69, p. 3, 1999.
18. 2," Appl. Phys. Lett., vol. 76, p. 2325, 2000.
19. 3+ luminescence in Nd-doped silicon-rich silicon oxide," Appl. Phys. Lett., vol. 83, p. 2778, 2003.
20. 2 films containing Si nanocrystals and Er," J. Appl. Phys., vol. 95, p. 272, 2004.
21. D. Pacifici, L. Lanzanò, G. Franzò, and F. Priolo, "Revealing the sequential nature of the Si-nanocluster-Er interaction by variable pulse duration excitation," Phys. Rev. B, vol. 72, p. 045349, 2005.
22. S. Schmitt-Rink, C. M. Varma, and A. F. J. Levi, "Excitation mechanisms and optical properties of rare-earth ions in semiconductors," Phys. Rev. Lett., vol. 66, p. 2782, 1991.
23. I. N. Yassievich and L. C. Kimerling, "The mechanisms of electronic excitation of rare earth impurities in semiconductors," Senncond. Sci. Technol., vol. 8, p. 718, 1993.
24. D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. Dal Negro, "Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification," Phys. Rev. B, vol. 67, p. 245301, 2003.
25. 2," J. Appl. Phys., vol. 91, p. 534, 2001.
26. J. Palm, F. Gan, B. Zheng, J. Michel, and L. C. Kimerling, "Electroluminescence of erbium-doped silicon," Phys. Rev. B, vol. 54, p. 17603, 1996.
27. 3 luminescence quenching of erbium-doped silicon-rich silicon oxide," Appl. Phys. Lett., vol. 75, p. 4070, 1999.
28. P. S. Andry, W. Varhue, F. Ladipo, K. Ahmed, E. Adams, M. Lavoie, P. B. Klein, R. Hengehold, and J. Hunter, "Growth of Er-doped silicon using metalorganics by plasma-enhanced chemical vapor deposition," J. Appl. Phys., vol. 80, p. 551, 1996.
29. 2 superlattices," Appl. Phys. Lett., vol. 74, p. 1573, 1999.
30. 2 superlattices formed by ion sputtering," Appl. Phys. Lett., vol. 82, p. 4489, 2003.
31. M. Zacharias and P. Streitenberger, "Crystallization of amorphous superlattices in the limit of ultrathin films with oxide interfaces," Phys. Rev. B, vol. 62, p. 8391, 2000.
32. S.-Y. Seo and J. H. Shin, "Controlling Er-Tm interaction in Er and Tm codoped silicon-rich silicon oxide using nanometer-scale spatial separation for efficient, broadband infrared luminescence," Appl. Phys. Lett., vol. 85, p. 4151, 2004.
33. E. Snoeks, P. G. Kik, and A. Polman, "Concentration quenching in erbium implanted alkali silicate glasses," Opt. Mater., vol. 5, p. 159, 1996.
34. 3+ by the energy transfer from Si nanocrystals," J. Appl. Phys., vol. 90, p. 4761, 2001.
35. 2 superlattices," Appl. Phys. Lett., vol. 76, p. 3567, 2000.
36. 2/Si structure," J. Appl. Phys., vol. 93, p. 2595, 2003.
37. P. Pellegrino, B. Garrido, J. Arbiol, C. Garcia, Y. Lebour, and J. R. Morante, "Site of Er ions in silica layers codoped with Si nanoclusters and Er," Appl. Phys. Lett., vol. 88, p. 1219215, 2006.
38. 2:(Mn,Y) crystals," Phys. Rev. B, vol. 39, p. 7905, 1989.
39. 2," Appl. Phys. Lett., vol. 69, p. 2033, 1996.
40. F. Iacona, G. Franzo, and C. Spinella, "Correlation between luminescence and structural properties of Si nanocrystals," J. Appl. Phys., vol. 87, p. 1295, 2000.
41. x films," J. Appl. Phys., vol. 95, p. 3723, 2004.
42. M. W. Sckerl, S. Guldberg-Kjaer, M. R. Poulsen, P. Shi, and J. Chevallier, "Precipitate coarsening and self organization in erbium-doped silica," Phys. Rev. B, vol. 59, p. 13494, 1999.
43. 2 films," Appl. Phys. Lett., vol. 46, p. 38, 1985.
44. J. H. Shin, S.-Y. Seo, S. Kim, and S. G. Bishop, "Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide," Appl. Phys. Lett., vol. 76, p. 1999, 2000.
45. 3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide," J. Appl. Phys., vol. 88, p. 2160, 2000.
46. J. Lee, J. H. Shin, and N. Park, "Optical gain at 1.5 μm in nanocrystal Si sensitized, Er-doped silica waveguide using top-pumping 470 nm LEDs," J. Lightw. Technol., vol. 23, no. 1, pp. 19-25, Jan. 2005.
47. H. Lee, J. H. Shin, and N. Park, "Performance analysis of nanocluster-Si sensitized Er-doped waveguide amplifier using top-pumped 470 nm LED," Opt. Exp., vol. 13, p. 9881, 2005.
48. C. R. Giles and E. Desurvire, "Modeling erbium-doped fiber amplifiers," J. Lightw. Technol., vol. 9, no. 2, pp. 271-283, Feb. 1991.
49. H.-S. Han, S.-Y. Seo, J. H. Shin, and N. Park, "Coefficient determination related to optical gain in erbium-doped silicon-rich silicon oxide waveguide amplifier," Appl. Phys. Lett., vol. 81, p. 3720, 2002.
50. 2," J. Appl. Phys., vol. 91, pp. 534-536, 2002.
51. P. G. Kik, "Towards an Er-doped Si nanocrystal sensitized waveguide laser-the thin line between gain and loss," in Towards the First Silicon Laser (NATO Sci. Ser. II 93). Norwell, MA: Kluwer, 2003.
52. 2 waveguide: Experiments and model," Appl. Phys. Lett., vol. 77, p. 1617, 2000.
53. 2," J. Appl. Phys., vol. 97, p. 074312, 2005.
54. J.-Y. Sung, A. Tewary, M. L. Brongersma, and J. H. Shin, "Cavity Q measurements of silica microspheres with nanocluster silicon active layer," submitted for publication.
55. N. Daldosso, D. Navarro-Urrios, M. Melchiorri, L. Pavesi, F. Gourbilleau, M. Carrada, R. Rizk, C. García, P. Pellegrino, B. Garrido, and L. Cognolato, "Absorption cross section and signal enhancement in Erdoped Si nanocluster rib-loaded waveguides," Appl. Phys. Lett., vol. 86, p. 261103, 2005.
56. 2," presented at the IEEE-LEOS GFP-II Conf., Antwerp, Belgium, 2005.