Cathodoluminescence and photoluminescence comparative study of erbium-doped silicon-rich silicon oxide

Journal of Nanophotonics

Volumn 5, Issue 1, 2011, Pages

  Cueff, Sébastien ^a   Labbé, Christophe ^a   Dierre, Benjamin ^b   Cardin, Julien ^a   Khomenkova, Larysa ^a   Fabbri, Filippo ^b   Sekiguchi, Takashi ^b   Rizk, Richard ^a  

^a UNIVERSITÉ DE CAEN   (France)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

cathodoluminescence.; energy transfer; erbium; photoluminescence; silicon nanoclusters; thin films

Indexed keywords

AGGLOMERATION; CATHODOLUMINESCENCE; DEPOSITION; ENERGY TRANSFER; ERBIUM; IONS; MAGNETRONS; NANOCLUSTERS; OPTICAL PROPERTIES; OXIDE FILMS; PHOTOLUMINESCENCE; SILICON OXIDES; THIN FILMS; EXPERIMENTS; OXYGEN; OXYGEN VACANCIES; SILICON; VAPOR DEPOSITION;

ANNEALING TEMPERATURES; DEPOSITION TEMPERATURES; ENERGY TRANSFER PROCESS; MAGNETRON CO-SPUTTERING; OXYGEN DEFICIENT CENTERS; SILICON NANOCLUSTERS; SILICON OXIDE THIN FILMS; STRUCTURAL DIFFERENCES; ANNEALING TREATMENTS; COMPARATIVE STUDIES; DEFECT CENTERS; DEPOSITED MATERIALS; DOPED SILICON; ER3+ IONS; ERBIUM-DOPED SILICON; HIGH TEMPERATURE; NONRESONANT; PL EFFICIENCY; SI NANOCLUSTER;

SILICON COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

EID: 79551700548     PISSN: None     EISSN: 19342608     Source Type: Journal    
DOI: 10.1117/1.3549701     Document Type: Article

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