Graded-size Si quantum dot ensembles for efficient light-emitting diodes

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Anopchenko, A ^a   Marconi, A ^a   Wang, M ^a,b,c   Pucker, G ^b   Bellutti, P ^b   Pavesi, L ^a  

^a UNIVERSITY OF TRENTO   (Italy)

^b FONDAZIONE BRUNO KESSLER   (Italy)

^c Astronergy Solar   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; COMPATIBLE PROCESS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTRICAL AND OPTICAL PROPERTIES; ENERGY BANDGAPS; OPTOELECTRONIC PROPERTIES; SI QUANTUM DOT; SILICON NANOCRYSTALS;

ELECTRIC PROPERTIES; ENERGY GAP; LIGHT EMISSION; LIGHT EMITTING DIODES; MULTILAYERS; NANOCLUSTERS; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SEMICONDUCTOR DIODES; SILICON; SILICON COMPOUNDS; SILICON OXIDES;

SEMICONDUCTING SILICON;

EID: 80855140790     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658625     Document Type: Article

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