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Volumn 106, Issue 6, 2009, Pages

Current transport and electroluminescence mechanisms in thin SiO 2 films containing Si nanocluster-sensitized erbium ions

(8) Jambois, O a Berencen, Y a Hijazi, K b Wojdak, M c Kenyon, A J c Gourbilleau, F b Rizk, R b Garrido, B a

a UNIVERSITY OF BARCELONA (Spain)

b Direction de la Recherche Fondamentale (France)

c UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED; CURRENT TRANSPORT; ELECTRICAL MEASUREMENT; ELECTROLUMINESCENCE PROPERTIES; ERBIUM ION; FOWLER-NORDHEIM TUNNELING; METAL OXIDE SEMICONDUCTOR; OXIDE LAYER; POOLE-FRENKEL CONDUCTION MECHANISM; POWER EFFICIENCY; SI NANOCLUSTER; SI NANOPARTICLES; SILICON NANOCLUSTERS;

ELECTROLUMINESCENCE; ELECTRON TUBE DIODES; ENERGY TRANSFER; ERBIUM; IONS; LIGHT EMISSION; METALLIC COMPOUNDS; MOS DEVICES; NANOCLUSTERS; OXIDE FILMS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SILICON OXIDES; SILICON SOLAR CELLS;

SEMICONDUCTING SILICON;

EID: 70349644121 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3213386 Document Type: Article

Times cited : (56)

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