Thickness-dependent optimization of Er 3+ light emission from silicon-rich silicon oxide thin films

Nanoscale Research Letters

Volumn 6, Issue , 2011, Pages 1-6

  Cueff, Sébastien ^a   Labbé, Christophe ^a   Jambois, Olivier ^b   Garrido, Blas ^b   Portier, Xavier ^a   Rizk, Richard ^a  

^a UNIVERSITÉ DE CAEN   (France)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM ION; HIGH STRESS; LOCAL DENSITY; OPTICAL STATE; SI-BASED; SILICON RICH SILICON OXIDES;

ERBIUM; OXIDE FILMS; SILICA; SILICON; SILICON OXIDES; THICK FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84856048120     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-395     Document Type: Article

References (22)

1. N Daldosso, L Pavesi, Nanosilicon photonics. Laser & Photonics Reviews. 3, 508-534 (2010)
2. AJ Kenyon, PF Trwoga, M Federighi, CW Pitt, Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions. J Phys: Condens Matter. 6, L319 (1994). doi:10.1088/0953-8984/6/21/007
3. O Jambois, F Gourbilleau, AJ Kenyon, J Montserrat, R Rizk, B Garrido, Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters. Opt Exp. 18, 2230 (2010). doi:10.1364/OE.18.002230
4. N Daldosso, D Navarro-Urrios, M Melchiorri, C García, P Pellegrino, B Garrido, C Sada, G Battaglin, F Gourbilleau, R Rizk, L Pavesi, Er-coupled Si nanocluster waveguide. IEEE J Sel Top Quant Electron. 12, 1607 (2006)
5. CA Barrios, M Lipson, Electrically driven silicon resonant light emitting device based on slot-waveguide. Opt Exp. 13, 10092 (2005). doi:10.1364/ OPEX.13.010092
6. x thin films: effects of film thickness and annealing temperature. Nanotechnology. 15, 494 (2004). doi:10.1088/0957-4484/15/5/016
7. I Ahmad, MP Temple, A Kallis, M Wojdak, CJ Oton, D Barbier, H Saleh, AJ Kenyon, WH Loh, Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters. J Appl Phys. 104, 123108 (2008). doi:10.1063/1.3050324
8. M Zacharias, P Streitenberger, Crystallization of amorphous superlattices in the limit of ultrathin films with oxide interfaces. Phys Rev B. 62, 8391 (2000). doi:10.1103/PhysRevB.62.8391
9. 2. J Appl Phys. 98, 084319 (2005). doi:10.1063/1.2115100
10. 2/Ag interface by silicon quantum dots: Experiment and theory. Phys Rev B. 73, 075317 (2006)
11. 3+ radiative lifetime from proximity to silicon nanoclusters in silicon-rich silicon oxide. Opt Exp. 17, 1906 (2009)
12. S Cueff, C Labbé, J Cardin, JL Doualan, L Khomenkova, K Hijazi, O Jambois, B Garrido, R Rizk, Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition. J Appl Phys. 108, 064302 (2010). doi:10.1063/1.3481375
13. x films produced by plasma enhanced chemical vapor deposition. J Vac Sci Technol. A4, 689 (1986)
14. O Savchyn, FR Ruhge, PG Kik, RM Todi, KR Coffey, H Nukala, H Heinrich, Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich SiO2 films. Phys Rev B. 76, 195419 (2007)
15. K Hijazi, R Rizk, J Cardin, L Khomenkova, F Gourbilleau, Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics. J Appl Phys. 106, 024311 (2009). doi:10.1063/1.3177243
16. GG Stoney, The tension of metallic films deposited by electrolysis. Proc R Soc London Ser A. 82, 172 (1909). doi:10.1098/rspa.1909.0021
17. 2 phase separation in substoichiometric silicon oxide films. Appl Phys Lett. 90, 183101 (2007). doi:10.1063/1.2734398
18. HZ Massoud, HM Przewlocki, Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices. J Appl Phys. 92, 2202 (2002). doi:10.1063/1.1489500
19. S Cueff, C Labbé, B Dierre, J Cardin, L Khomenkova, F Fabbri, T Sekiguchi, R Rizk, Cathodoluminescence and photoluminescence comparative study of Er-doped Si-rich silicon oxide. J Nanophoton. 5, 051504 (2011). doi:10.1117/ 1.3549701
20. S Cueff, Labbé, R Rizk, Impact of the annealing temperature on the optical performances of Er-doped Si-rich Silica systems. IOP Conf Ser: Mater Sci Eng. 6, 012021 (2009)
21. 3+ ions by cathodoluminescence technique. J Appl Phys. 108, 113504 (2010). doi:10.1063/1.3517091
22. x. Appl Phys Lett. 90, 183102 (2007). doi:10.1063/ 1.2734505