Study of the interface states in MIS-structures with thin SiO2 and SiOxNy layers using deep level transient spectroscopy

Microelectronics Reliability

Volumn 39, Issue 2, 1999, Pages 297-302

  Beyer, R ^a   Burghardt, H ^a   Thomas, E ^a   Reich, R ^a   Zahn, D R T ^a   Gessner, T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; INTERFACES (MATERIALS); RAPID THERMAL ANNEALING; SILICA;

ARRHENIUS EVALUATION;

MIS DEVICES;

EID: 0032653547     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00235-2     Document Type: Article

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