Deconvolution of the transient response of (1 0 0) Si/SiO2 semiconductor-insulator interface states according to small pulse excitation: Evidence of different branches of charge transition

Solid-State Electronics

Volumn 44, Issue 8, 2000, Pages 1463-1470

  Beyer, R ^a   Burghardt, H ^a   Thurzo, I ^b   Zahn, D R T ^a   Gessner T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF PHYSICS   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CRYSTAL ORIENTATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

CHARGE RELAXATION TRANSITIONS; GAUSSIAN PEAK DECONVOLUTION; TRANSIENT RESPONSE;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 0033727141     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00064-2     Document Type: Article

References (24)

1. Johnson N.M. Appl Phys Lett. 34:1979;802.
2. Yamasaki K., Yoshida M., Sugano T. Jpn J Appl Phys Part 1. 18:1979;113.
3. Katsube T., Kakimoto K., Ikoma T. J Appl Phys. 52:1981;3504.
4. Johnson N.M. J Vac Sci Technol. 21:1982;303.
5. Li X., Tansley T.L. J Appl Phys. 72:1992;4125.
6. Murray F., Carin R., Bogdanski P. J Appl Phys. 60:1986;3592.
7. Beyer R, Burghardt H, Geßner T, Zahn DRT, Thurzo I, Appl Surf Sci, submitted for publication.
8. Weiss S., Kassing R. Solid-State Electron. 31:1988;1733.
9. Thurzo I., Ivanco J. Appl Surf Sci. 108:1997;187.
10. Berglund C.N. IEEE Trans Electron Dev. ED-13:1966;701.
11. Flietner H. Surf Sci. 200:1988;463.
12. Grimmeiss H.G., Buchwald W.R., Poindexter E.H., Caplan P.J., Harmatz M., Gerardi G.J., Keeble D.J., Johnson N.M. Phys Rev B. 39:1989;5175.
13. Uren M.J., Nayar V., Brunson K.M., Anthony C.J., Stathis J.H., Cartier E. J. Electrochem Soc. 145:1998;683.
14. Terman L.M. Solid-State Electron. 5:1962;285.
15. Nicollian E.H., Brews J.R. MOS (metal oxide semiconductor) physics and technology. 1982;Wiley, New York.
16. Pearce N.O., Hamilton B., Peaker A.R., Craven R.A. J Appl Phys. 62:1987;576.
17. Flietner H. Phys Stat Sol (b). 54:1972;201.
18. Aberle A.G., Glunz S., Warta W. J Appl Phys. 71:1992;4422.
19. McLarty P.K., Ioannou D.E. IEEE Trans Electron Dev. 37:1990;262.
20. Haneji N., Vishnubhotla L., Ma T.P. Appl Phys Lett. 59:1991;3416.
21. Uren M.J., Brunson K.M., Hodge A.M. Appl Phys Lett. 60:1992;624.
22. Inoue M., Shirafuji J. J Appl Phys. 80:1996;6315.
23. Vuillaume D., Goguenheim D., Vincent G. Appl Phys Lett. 57:1990;1206.
24. Albohn J., Füssel W., Sinh N.D., Kliefoth K., Flietner H., Fuhs W. Microelectron Engin. 48:1999;159.