Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 749-752

  Martens, K ^a   Simoen, E ^a   De Jaeger, B ^a   Meuris, M ^a   Groeseneken, G ^a   Maes, H ^a  

^a IMEC   (Belgium)

Author keywords

Deep level transient spectroscopy (DLTS); Germanium MOSFETs (Ge MOSFETs)

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; GERMANIUM; SILICON;

GERMANIUM MOSFETS (GE-MOSFET); INTERFACE STATES; MIDGAP;

CAPACITORS;

EID: 33845214168     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.065     Document Type: Article

References (12)

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