SCOPUS 정보 검색 플랫폼

Volumn 254, Issue 22, 2008, Pages 7512-7515

A study of interface characteristics in HfAlO/p-Si by deep level transient spectroscopy

(4) Zhan, Ning a Xu, Min a Zhang, David Wei a Lu, Fang a

Author keywords

Aluminum; Annealing; Deep level transient spectroscopy; Hafniun oxide; Interface traps; MOS capacitors; Passivation; Silicon

Indexed keywords

ALUMINUM; ANNEALING; CAPACITANCE; INTERFACE STATES; MOS CAPACITORS; PASSIVATION; SILICON;

ANNEALING TEMPERATURES; DEPASSIVATION; HIGH FREQUENCY CAPACITANCE; INTERFACE CHARACTERISTIC; INTERFACE TRAPS; INTERFACIAL TRAPS; POST ANNEALING; VALANCE BANDS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 50549094009 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2008.06.006 Document Type: Article

Times cited : (10)

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