Distinguishing bulk traps and interface states in deep-level transient spectroscopy

Journal of Physics D: Applied Physics

Volumn 44, Issue 30, 2011, Pages

  Coelho, A V P ^a   Adam, M C ^a   Boudinov, H ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

BULK TRAPS; DEEP LEVEL; EMISSION RATES; GAAS; HIGHER TEMPERATURES; INTERFACE STATE; NON DESTRUCTIVE; PEAK MAXIMA; PROTON IMPLANTED; PULSE VOLTAGE; REVERSE VOLTAGES; SCHOTTKY DIODES;

ELECTRIC FIELDS; MOS CAPACITORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 79960873677     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/30/305303     Document Type: Article

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