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Volumn 13, Issue 1, 2013, Pages 53-59

Two diodes model and illumination effect on the forward and reverse bias I-V and C-V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature

(3) Demirezen, S a Altndal, S a Uslu, I a

a GAZI UNIVERSITY (Turkey)

Author keywords

Illumination effect; Interface states; Photodiode; Series and shunt resistance

Indexed keywords

BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; BI-DOPED; CAPACITANCE SENSORS; CURRENT VOLTAGE; DEPLETION REGION; ELECTRON HOLE PAIRS; ELECTRONIC INDUSTRIES; ENERGY DENSITY DISTRIBUTIONS; EXPONENTIAL GROWTH; FABRICATION PROCESS; FILL FACTOR; FORWARD BIAS; I-V AND C-V CHARACTERISTICS; I-V MEASUREMENTS; ILLUMINATION EFFECT; ILLUMINATION INTENSITY; ILLUMINATION LEVELS; INTERFACIAL POLYMERS; OPTOELECTRONIC APPLICATIONS; PARTICULAR DISTRIBUTION; REVERSE BIAS; ROOM TEMPERATURE; SERIES AND SHUNT RESISTANCES; VOLTAGE DEPENDENCE;

CAPACITANCE; DIODES; FABRICATION; INTERFACE STATES; PHOTODIODES; SILICON;

BIAS VOLTAGE;

EID: 84866111430 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2012.06.009 Document Type: Article

Times cited : (77)

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