Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes

Materials Science and Engineering: B

Volumn 177, Issue 5, 2012, Pages 416-420

  Gokcen M ^a   Tunc T ^b   Altindal, S ^c   Uslu, I ^c  

^a DUZCE UNIVERSITY   (Turkey)

^b AKSARAY UNIVERSITY   (Turkey)

^c GAZI UNIVERSITY   (Turkey)

Author keywords

Co doped PVA; Metal polymer semiconductor (MPS); Photoconductive diodes; Series resistance effect

Indexed keywords

COBALT; ELECTRIC RESISTANCE; OPEN CIRCUIT VOLTAGE; PHOTOCONDUCTIVITY;

CO DOPED POLYVINYL ALCOHOL; CO-DOPED; ELECTRICAL CHARACTERISTIC; ILLUMINATION INTENSITY; INTERFACIAL LAYER; METAL POLYMERS; METAL-POLYMER-SEMICONDUCTOR; PHOTOCONDUCTIVE DIODES; POLYMER SEMICONDUCTORS; SERIES RESISTANCE EFFECTS;

SEMICONDUCTOR DIODES;

EID: 84858159717     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2012.01.004     Document Type: Article

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