Electrical properties of ferroelectric Bi4Ti3O12 thin films by APMOCVD

Ferroelectrics

Volumn 195, Issue 1-4, 1997, Pages 233-236

  Wang, H ^a,b   Shen, X N ^a   Su, X J ^a   Wang, Z ^a   Shang, S X ^a   Wang, M ^a  

^a SHANDONG UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CHARGE TRANSFER; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC SPACE CHARGE; FERROELECTRIC MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; REACTION KINETICS; SEMICONDUCTING SILICON; THIN FILMS;

CURIE TEMPERATURE; OHMIC BEHAVIOR; SPACE CHARGE LIMITED CURRENT CONDUCTION;

DIELECTRIC FILMS;

EID: 0031382993     PISSN: 00150193     EISSN: None     Source Type: Journal    
DOI: 10.1080/00150199708260528     Document Type: Article

References (5)

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4. H. Wang, L. W. Fu and S. X. Shang. J. Appl. Phys., 73, 7963 (1993).
5. A. E. Rakhshani, J. Appl. Phys. 69, 2365(1991).