Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge 2Sb2Te5 films studied by in situ resistance measurements

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3044-3046

  Privitera, S ^a   Rimini, E ^a   Zonca, R ^b  

^a CNR   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; DEPOSITION; ELECTRIC RESISTANCE; ION IMPLANTATION; MICROSTRUCTURE; NITROGEN; OXYGEN; PHASE TRANSITIONS; RANDOM ACCESS STORAGE; THIN FILMS;

AMORPHOUS PHASES; CRYSTAL TRANSITION; IN SITU RESISTANCE; PHASE CHANGE;

GERMANIUM ALLOYS;

EID: 8644226159     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1805200     Document Type: Article

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