Size-Dependent Surface-Induced heterogeneous nucleation driven Phase-Change in Ge 2Sb 2Te 5 nanowires

Nano Letters

Volumn 8, Issue 10, 2008, Pages 3303-3309

  Lee, Se Ho ^a   Yeonwoong, Jung ^a   Agarwal, Ritesh ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY BARRIERS; AMORPHOUS PHASE; DOMINANT MECHANISMS; ELECTRICAL MEASUREMENTS; HETEROGENEOUS NUCLEATIONS; IN-PHASE; LENGTH SCALE; NANO-SCALE; NON VOLATILE MEMORY DEVICES; NUCLEATION RATES; NUCLEATION SITES; ORDERS OF MAGNITUDES; PHASE CHANGES; PHASE-TRANSITIONS; PHONON INSTABILITIES; RECRYSTALLIZATION; SURFACE-TO-VOLUME RATIOS; SYSTEMATIC STUDIES;

ACTIVATION ENERGY; ELECTRIC WIRE; GERMANIUM; NANOWIRES; NUCLEATION; RECRYSTALLIZATION (METALLURGY); TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 61849151341     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801698h     Document Type: Article

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